Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops
In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previous...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-06-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/13/1572 |
| _version_ | 1797528262118735872 |
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| author | Ehab A. Hamed Inhee Lee |
| author_facet | Ehab A. Hamed Inhee Lee |
| author_sort | Ehab A. Hamed |
| collection | DOAJ |
| description | In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design. |
| first_indexed | 2024-03-10T09:55:41Z |
| format | Article |
| id | doaj.art-5d647a74e1d4439d9912f428d78f90dc |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T09:55:41Z |
| publishDate | 2021-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-5d647a74e1d4439d9912f428d78f90dc2023-11-22T02:19:56ZengMDPI AGElectronics2079-92922021-06-011013157210.3390/electronics10131572Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-FlopsEhab A. Hamed0Inhee Lee1Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, USADepartment of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, USAIn the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design.https://www.mdpi.com/2079-9292/10/13/1572dual interlocked storage cell (DICE)flip-flop (FF)linear energy transfer (LET)radiation-hardened-by-design (RHBD)single event transient (SET)single event upset (SEU) |
| spellingShingle | Ehab A. Hamed Inhee Lee Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops Electronics dual interlocked storage cell (DICE) flip-flop (FF) linear energy transfer (LET) radiation-hardened-by-design (RHBD) single event transient (SET) single event upset (SEU) |
| title | Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops |
| title_full | Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops |
| title_fullStr | Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops |
| title_full_unstemmed | Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops |
| title_short | Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops |
| title_sort | categorization and seu fault simulations of radiation hardened by design flip flops |
| topic | dual interlocked storage cell (DICE) flip-flop (FF) linear energy transfer (LET) radiation-hardened-by-design (RHBD) single event transient (SET) single event upset (SEU) |
| url | https://www.mdpi.com/2079-9292/10/13/1572 |
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