Getters in silicon
Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied. Structural defect based getters and gas phase getters based on chlorine containing compounds...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2019-03-01
|
| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/38575/download/pdf/ |