Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study
This paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials. Here we have studied the transfer characteristics, on/off current (ION/IOFF) ratio and subthreshold slope of the device using Non Equilibrium Greens F...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2016-01-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379716302017 |
| _version_ | 1828383360908525568 |
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| author | Md. Shamim Sarker Muhammad Mainul Islam Md. Nur Kutubul Alam Md. Rafiqul Islam |
| author_facet | Md. Shamim Sarker Muhammad Mainul Islam Md. Nur Kutubul Alam Md. Rafiqul Islam |
| author_sort | Md. Shamim Sarker |
| collection | DOAJ |
| description | This paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials. Here we have studied the transfer characteristics, on/off current (ION/IOFF) ratio and subthreshold slope of the device using Non Equilibrium Greens Function (NEGF) formalism in tight binding frameworks. The results are obtained by solving the NEGF and Poisson’s equation self-consistently in NanoTCADViDES environment and found that the ON state performance of CNT MOSFET and CNT TFET have significant dependency on the dielectric strength of the gate oxide materials. The figure of merits of the devices also demonstrates that the CNT TFET is promising for high-speed and low-power logic applications. Keywords: CNT TFET, Subthreshold slop, Barrier width, Conduction band (C.B) and Valance band (V.B), Oxide dielectric strength, Tight binding approach |
| first_indexed | 2024-12-10T04:47:48Z |
| format | Article |
| id | doaj.art-5d83981973734edb8c28aa0ce4a242a3 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-10T04:47:48Z |
| publishDate | 2016-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-5d83981973734edb8c28aa0ce4a242a32022-12-22T02:01:42ZengElsevierResults in Physics2211-37972016-01-016879883Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding studyMd. Shamim Sarker0Muhammad Mainul Islam1Md. Nur Kutubul Alam2Md. Rafiqul Islam3Corresponding author.; Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, BangladeshDepartment of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, BangladeshDepartment of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, BangladeshDepartment of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, BangladeshThis paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials. Here we have studied the transfer characteristics, on/off current (ION/IOFF) ratio and subthreshold slope of the device using Non Equilibrium Greens Function (NEGF) formalism in tight binding frameworks. The results are obtained by solving the NEGF and Poisson’s equation self-consistently in NanoTCADViDES environment and found that the ON state performance of CNT MOSFET and CNT TFET have significant dependency on the dielectric strength of the gate oxide materials. The figure of merits of the devices also demonstrates that the CNT TFET is promising for high-speed and low-power logic applications. Keywords: CNT TFET, Subthreshold slop, Barrier width, Conduction band (C.B) and Valance band (V.B), Oxide dielectric strength, Tight binding approachhttp://www.sciencedirect.com/science/article/pii/S2211379716302017 |
| spellingShingle | Md. Shamim Sarker Muhammad Mainul Islam Md. Nur Kutubul Alam Md. Rafiqul Islam Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study Results in Physics |
| title | Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study |
| title_full | Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study |
| title_fullStr | Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study |
| title_full_unstemmed | Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study |
| title_short | Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study |
| title_sort | gate dielectric strength dependent performance of cnt mosfet and cnt tfet a tight binding study |
| url | http://www.sciencedirect.com/science/article/pii/S2211379716302017 |
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