Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study

Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study

This paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials. Here we have studied the transfer characteristics, on/off current (ION/IOFF) ratio and subthreshold slope of the device using Non Equilibrium Greens F...

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Bibliographic Details
Main Authors: Md. Shamim Sarker, Muhammad Mainul Islam, Md. Nur Kutubul Alam, Md. Rafiqul Islam
Format: Article
Language:English
Published: Elsevier 2016-01-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379716302017

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