Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-TFET with the oxide/source overlap structure...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-10-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/10/1232 |
| _version_ | 1797513820627795968 |
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| author | Chen Chong Hongxia Liu Shulong Wang Xiaocong Wu |
| author_facet | Chen Chong Hongxia Liu Shulong Wang Xiaocong Wu |
| author_sort | Chen Chong |
| collection | DOAJ |
| description | Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-TFET with the oxide/source overlap structure is a device with development potential. The total ionizing dose (TID) effect on SOI-TFET was studied by discussing the switching ratio, band–band tunneling rate, threshold voltage, sub-threshold swing and bipolar effect of the device under different doses of irradiation. At the same time, simulations prove that selecting the proper thickness of the buried oxide (BOX) layer can effectively reduce the influence of the TID effect. This provides a way of direction and method for research on the irradiation effects on the device in the future. |
| first_indexed | 2024-03-10T06:22:00Z |
| format | Article |
| id | doaj.art-5d853645ac944bc2ba1477b7dbd0cb8f |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T06:22:00Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-5d853645ac944bc2ba1477b7dbd0cb8f2023-11-22T19:11:57ZengMDPI AGMicromachines2072-666X2021-10-011210123210.3390/mi12101232Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFETChen Chong0Hongxia Liu1Shulong Wang2Xiaocong Wu3Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microlectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microlectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microlectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microlectronics, Xidian University, Xi’an 710071, ChinaSince the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-TFET with the oxide/source overlap structure is a device with development potential. The total ionizing dose (TID) effect on SOI-TFET was studied by discussing the switching ratio, band–band tunneling rate, threshold voltage, sub-threshold swing and bipolar effect of the device under different doses of irradiation. At the same time, simulations prove that selecting the proper thickness of the buried oxide (BOX) layer can effectively reduce the influence of the TID effect. This provides a way of direction and method for research on the irradiation effects on the device in the future.https://www.mdpi.com/2072-666X/12/10/1232silicon-on-insulator (SOI)total ionizing dose (TID)tunneling field effect transistor (TFET) |
| spellingShingle | Chen Chong Hongxia Liu Shulong Wang Xiaocong Wu Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET Micromachines silicon-on-insulator (SOI) total ionizing dose (TID) tunneling field effect transistor (TFET) |
| title | Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET |
| title_full | Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET |
| title_fullStr | Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET |
| title_full_unstemmed | Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET |
| title_short | Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET |
| title_sort | research on total ionizing dose effect and reinforcement of soi tfet |
| topic | silicon-on-insulator (SOI) total ionizing dose (TID) tunneling field effect transistor (TFET) |
| url | https://www.mdpi.com/2072-666X/12/10/1232 |
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