A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor
An automatic programming tool has become an essential component in virtual fabrication in recent years. This paper aims to propose a methodology of virtual fabrication for semiconductor devices and design a tool called Technology Computer-Aided Design Automatic Simulation (TCADAS) which can perform...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Elsevier
2024-02-01
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| Series: | Heliyon |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844024025271 |
| _version_ | 1797267669329641472 |
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| author | Thinh Dang Cong Trang Hoang |
| author_facet | Thinh Dang Cong Trang Hoang |
| author_sort | Thinh Dang Cong |
| collection | DOAJ |
| description | An automatic programming tool has become an essential component in virtual fabrication in recent years. This paper aims to propose a methodology of virtual fabrication for semiconductor devices and design a tool called Technology Computer-Aided Design Automatic Simulation (TCADAS) which can perform a completely virtual fabrication, device simulation, process variation, and output extraction. Especially, the TCADAS tool eliminates drudgery when studying semiconductor devices such as complexity in setting inputs, substantial manual work, and long run time of simulations. This work investigates the completed flow for a 65 nm conventional Floating-gate MOS transistor as a case study, which is widely considered a vital determinant of the non-volatile memory field. A detailed automatic process from the entry to a completed three-dimension structure, device characterization, extract important output parameters such as memory window, ION/IOFF, Gate Coupling Ratio (GCR), and speed operations are presented. The TCADAS tool was designed by Python language and the utilities of TCAD Silvaco tools including Athena, Atlas, and DevEdit3D. |
| first_indexed | 2024-03-07T20:04:02Z |
| format | Article |
| id | doaj.art-5d9650a35c7e44bd9700dcafc9af93cd |
| institution | Directory Open Access Journal |
| issn | 2405-8440 |
| language | English |
| last_indexed | 2024-04-25T01:20:15Z |
| publishDate | 2024-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj.art-5d9650a35c7e44bd9700dcafc9af93cd2024-03-09T09:28:27ZengElsevierHeliyon2405-84402024-02-01104e26496A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistorThinh Dang Cong0Trang Hoang1Department of Electronics Engineering, Ho Chi Minh City University of Technology (HCMUT), Ho Chi Minh City, 72506, Viet Nam; Vietnam National University, Ho Chi Minh City, 71308, Viet NamDepartment of Electronics Engineering, Ho Chi Minh City University of Technology (HCMUT), Ho Chi Minh City, 72506, Viet Nam; Vietnam National University, Ho Chi Minh City, 71308, Viet Nam; Corresponding author at: Department of Electronics Engineering, Ho Chi Minh City University of Technology (HCMUT), Ho Chi Minh City, 72506, Viet Nam.An automatic programming tool has become an essential component in virtual fabrication in recent years. This paper aims to propose a methodology of virtual fabrication for semiconductor devices and design a tool called Technology Computer-Aided Design Automatic Simulation (TCADAS) which can perform a completely virtual fabrication, device simulation, process variation, and output extraction. Especially, the TCADAS tool eliminates drudgery when studying semiconductor devices such as complexity in setting inputs, substantial manual work, and long run time of simulations. This work investigates the completed flow for a 65 nm conventional Floating-gate MOS transistor as a case study, which is widely considered a vital determinant of the non-volatile memory field. A detailed automatic process from the entry to a completed three-dimension structure, device characterization, extract important output parameters such as memory window, ION/IOFF, Gate Coupling Ratio (GCR), and speed operations are presented. The TCADAS tool was designed by Python language and the utilities of TCAD Silvaco tools including Athena, Atlas, and DevEdit3D.http://www.sciencedirect.com/science/article/pii/S2405844024025271TCAD Silvaco toolSemiconductor deviceFloating-gate MOS transistorDevice characterization |
| spellingShingle | Thinh Dang Cong Trang Hoang A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor Heliyon TCAD Silvaco tool Semiconductor device Floating-gate MOS transistor Device characterization |
| title | A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor |
| title_full | A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor |
| title_fullStr | A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor |
| title_full_unstemmed | A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor |
| title_short | A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor |
| title_sort | design tcadas tool for semiconductor devices and case study of 65 nm conventional floating gate mos transistor |
| topic | TCAD Silvaco tool Semiconductor device Floating-gate MOS transistor Device characterization |
| url | http://www.sciencedirect.com/science/article/pii/S2405844024025271 |
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