A Study on the Resolution and Depth of Focus of ArF Immersion Photolithography
In this study, the resolution and depth of focus (DOF) of the ArF immersion scanner are measured experimentally according to numerical aperture (<i>NA</i>). Based on the experiment, the theoretical trade-off relationship between the resolution and depth of focus can be confirmed and <...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/11/1971 |
| _version_ | 1797464488197226496 |
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| author | Jungchul Song Chae-Hwan Kim Ga-Won Lee |
| author_facet | Jungchul Song Chae-Hwan Kim Ga-Won Lee |
| author_sort | Jungchul Song |
| collection | DOAJ |
| description | In this study, the resolution and depth of focus (DOF) of the ArF immersion scanner are measured experimentally according to numerical aperture (<i>NA</i>). Based on the experiment, the theoretical trade-off relationship between the resolution and depth of focus can be confirmed and <i>k</i><sub>1</sub> and <i>k</i><sub>2</sub> are extracted to be about 0.288 and 0.745, respectively. Another observation for a problem in small critical dimension realization is the increase in line width roughness (LWR) according to mask open area ratio. To mitigate the trade-off problem and critical dimension variation, the photoresist thickness effect on depth of focus is analyzed. Generally, the photoresist thickness is chosen considering depth of focus, which is decided by <i>NA</i>. In practice, the depth of focus is found to be influenced by the photoresist thickness, which can be caused by the intensity change of the reflected ArF light. This means that photoresist thickness can be optimized under a fixed <i>NA</i> in ArF immersion photolithography technology according to the critical dimension and pattern density of the target layer. |
| first_indexed | 2024-03-09T18:08:50Z |
| format | Article |
| id | doaj.art-5dcc00d46aed4fb38aaab1fc5f6fbda9 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T18:08:50Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-5dcc00d46aed4fb38aaab1fc5f6fbda92023-11-24T09:15:40ZengMDPI AGMicromachines2072-666X2022-11-011311197110.3390/mi13111971A Study on the Resolution and Depth of Focus of ArF Immersion PhotolithographyJungchul Song0Chae-Hwan Kim1Ga-Won Lee2Office of Nano Convergence Technology, National NanoFab Center, Daejeon 34141, KoreaOffice of Nano Convergence Technology, National NanoFab Center, Daejeon 34141, KoreaDivision of Electronics Engineering, Chungnam National University, Yusung-gu, Daejeon 34134, KoreaIn this study, the resolution and depth of focus (DOF) of the ArF immersion scanner are measured experimentally according to numerical aperture (<i>NA</i>). Based on the experiment, the theoretical trade-off relationship between the resolution and depth of focus can be confirmed and <i>k</i><sub>1</sub> and <i>k</i><sub>2</sub> are extracted to be about 0.288 and 0.745, respectively. Another observation for a problem in small critical dimension realization is the increase in line width roughness (LWR) according to mask open area ratio. To mitigate the trade-off problem and critical dimension variation, the photoresist thickness effect on depth of focus is analyzed. Generally, the photoresist thickness is chosen considering depth of focus, which is decided by <i>NA</i>. In practice, the depth of focus is found to be influenced by the photoresist thickness, which can be caused by the intensity change of the reflected ArF light. This means that photoresist thickness can be optimized under a fixed <i>NA</i> in ArF immersion photolithography technology according to the critical dimension and pattern density of the target layer.https://www.mdpi.com/2072-666X/13/11/1971photolithographyArF immersionDOFresolutionPR thickness |
| spellingShingle | Jungchul Song Chae-Hwan Kim Ga-Won Lee A Study on the Resolution and Depth of Focus of ArF Immersion Photolithography Micromachines photolithography ArF immersion DOF resolution PR thickness |
| title | A Study on the Resolution and Depth of Focus of ArF Immersion Photolithography |
| title_full | A Study on the Resolution and Depth of Focus of ArF Immersion Photolithography |
| title_fullStr | A Study on the Resolution and Depth of Focus of ArF Immersion Photolithography |
| title_full_unstemmed | A Study on the Resolution and Depth of Focus of ArF Immersion Photolithography |
| title_short | A Study on the Resolution and Depth of Focus of ArF Immersion Photolithography |
| title_sort | study on the resolution and depth of focus of arf immersion photolithography |
| topic | photolithography ArF immersion DOF resolution PR thickness |
| url | https://www.mdpi.com/2072-666X/13/11/1971 |
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