Efficient Biexciton State Preparation in a Semiconductor Quantum Dot Coupled to a Metal Nanoparticle with Linearly Chirped Gaussian Pulses

We consider a hybrid nanostructure composed of a semiconductor quantum dot placed near a spherical metallic nanoparticle, and study the effect of the nanoparticle on the population transferral from the ground to the biexciton state of the quantum dot, when using linearly chirped Gaussian pulses. For...

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Main Authors: Athanasios Smponias, Dionisis Stefanatos, George P. Katsoulis, Ioannis Thanopulos, Emmanuel Paspalakis
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/18/3098
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author Athanasios Smponias
Dionisis Stefanatos
George P. Katsoulis
Ioannis Thanopulos
Emmanuel Paspalakis
author_facet Athanasios Smponias
Dionisis Stefanatos
George P. Katsoulis
Ioannis Thanopulos
Emmanuel Paspalakis
author_sort Athanasios Smponias
collection DOAJ
description We consider a hybrid nanostructure composed of a semiconductor quantum dot placed near a spherical metallic nanoparticle, and study the effect of the nanoparticle on the population transferral from the ground to the biexciton state of the quantum dot, when using linearly chirped Gaussian pulses. For various values of the system parameters (biexciton energy shift, pulse area and chirp, interparticle distance), we calculate the final population of the biexciton state by performing numerical simulations of the non-linear density matrix equations which describe the coupled system, as well as its interaction with the applied electromagnetic field. We find that for relatively large values of the biexciton energy shift and not very small interparticle distances, the presence of the nanoparticle improves the biexciton state preparation, since it effectively increases the area of the applied pulse. For smaller biexciton energy shifts and smaller distances between the quantum dot and the nanoparticle, the performance is, in general, degraded. However, even in these cases we can still find ranges of parameter values where the population transfer to the biexciton state is accomplished with high fidelity, when using linearly chirped Gaussian pulses. We anticipate that our results may be exploited for the implementation of novel nanoscale photonic devices or future quantum technologies.
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spelling doaj.art-5dfe7382ee8d432fbe78368b4cf2264f2023-11-23T18:05:25ZengMDPI AGNanomaterials2079-49912022-09-011218309810.3390/nano12183098Efficient Biexciton State Preparation in a Semiconductor Quantum Dot Coupled to a Metal Nanoparticle with Linearly Chirped Gaussian PulsesAthanasios Smponias0Dionisis Stefanatos1George P. Katsoulis2Ioannis Thanopulos3Emmanuel Paspalakis4Materials Science Department, School of Natural Sciences, University of Patras, 26504 Patras, GreeceMaterials Science Department, School of Natural Sciences, University of Patras, 26504 Patras, GreeceDepartment of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, UKMaterials Science Department, School of Natural Sciences, University of Patras, 26504 Patras, GreeceMaterials Science Department, School of Natural Sciences, University of Patras, 26504 Patras, GreeceWe consider a hybrid nanostructure composed of a semiconductor quantum dot placed near a spherical metallic nanoparticle, and study the effect of the nanoparticle on the population transferral from the ground to the biexciton state of the quantum dot, when using linearly chirped Gaussian pulses. For various values of the system parameters (biexciton energy shift, pulse area and chirp, interparticle distance), we calculate the final population of the biexciton state by performing numerical simulations of the non-linear density matrix equations which describe the coupled system, as well as its interaction with the applied electromagnetic field. We find that for relatively large values of the biexciton energy shift and not very small interparticle distances, the presence of the nanoparticle improves the biexciton state preparation, since it effectively increases the area of the applied pulse. For smaller biexciton energy shifts and smaller distances between the quantum dot and the nanoparticle, the performance is, in general, degraded. However, even in these cases we can still find ranges of parameter values where the population transfer to the biexciton state is accomplished with high fidelity, when using linearly chirped Gaussian pulses. We anticipate that our results may be exploited for the implementation of novel nanoscale photonic devices or future quantum technologies.https://www.mdpi.com/2079-4991/12/18/3098semiconductor quantum dotsbiexcitoncoherent controladiabatic rapid passage
spellingShingle Athanasios Smponias
Dionisis Stefanatos
George P. Katsoulis
Ioannis Thanopulos
Emmanuel Paspalakis
Efficient Biexciton State Preparation in a Semiconductor Quantum Dot Coupled to a Metal Nanoparticle with Linearly Chirped Gaussian Pulses
Nanomaterials
semiconductor quantum dots
biexciton
coherent control
adiabatic rapid passage
title Efficient Biexciton State Preparation in a Semiconductor Quantum Dot Coupled to a Metal Nanoparticle with Linearly Chirped Gaussian Pulses
title_full Efficient Biexciton State Preparation in a Semiconductor Quantum Dot Coupled to a Metal Nanoparticle with Linearly Chirped Gaussian Pulses
title_fullStr Efficient Biexciton State Preparation in a Semiconductor Quantum Dot Coupled to a Metal Nanoparticle with Linearly Chirped Gaussian Pulses
title_full_unstemmed Efficient Biexciton State Preparation in a Semiconductor Quantum Dot Coupled to a Metal Nanoparticle with Linearly Chirped Gaussian Pulses
title_short Efficient Biexciton State Preparation in a Semiconductor Quantum Dot Coupled to a Metal Nanoparticle with Linearly Chirped Gaussian Pulses
title_sort efficient biexciton state preparation in a semiconductor quantum dot coupled to a metal nanoparticle with linearly chirped gaussian pulses
topic semiconductor quantum dots
biexciton
coherent control
adiabatic rapid passage
url https://www.mdpi.com/2079-4991/12/18/3098
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