Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS

Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS

Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) represent an appealing alternative to hybrid detectors for radiation imaging applications. We have recently demonstrated the feasibility of FD-MAPS based on a commercial 110 nm CMOS technology, adapted using high-resistivity substrates and bac...

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Bibliographic Details
Main Authors: Thomas Corradino, Gian-Franco Dalla Betta, Lorenzo De Cilladi, Coralie Neubüser, Lucio Pancheri
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Sensors
Subjects:
MAPS
radiation detectors
CMOS
device characterization
TCAD simulation
Online Access:https://www.mdpi.com/1424-8220/21/11/3809

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