Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation
In order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the relationship between heavy ion energy deposition...
| Príomhchruthaitheoirí: | , , , , , , , , , |
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| Formáid: | Alt |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
AIP Publishing LLC
2024-02-01
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| Sraith: | AIP Advances |
| Rochtain ar líne: | http://dx.doi.org/10.1063/5.0188085 |