Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output c...
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| Format: | Article |
| Language: | English |
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Iran University of Science and Technology
2010-06-01
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| Series: | Iranian Journal of Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://ijeee.iust.ac.ir/browse.php?a_code=A-10-222-2&slc_lang=en&sid=1 |
| _version_ | 1818549486013644800 |
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| author | M. Fathipour M. H. Refan S. M. Ebrahimi |
| author_facet | M. Fathipour M. H. Refan S. M. Ebrahimi |
| author_sort | M. Fathipour |
| collection | DOAJ |
| description | High Q frequency reference devices are essential components in many Integrated
circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate
in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device
has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde
channel and Gaussian retrograde channels have been investigated. |
| first_indexed | 2024-12-12T08:33:58Z |
| format | Article |
| id | doaj.art-5e41b3441757467db1e2c1ed4e0f264b |
| institution | Directory Open Access Journal |
| issn | 1735-2827 2383-3890 |
| language | English |
| last_indexed | 2024-12-12T08:33:58Z |
| publishDate | 2010-06-01 |
| publisher | Iran University of Science and Technology |
| record_format | Article |
| series | Iranian Journal of Electrical and Electronic Engineering |
| spelling | doaj.art-5e41b3441757467db1e2c1ed4e0f264b2022-12-22T00:31:00ZengIran University of Science and TechnologyIranian Journal of Electrical and Electronic Engineering1735-28272383-38902010-06-01627783Design of a Resonant Suspended Gate MOSFET with Retrograde Channel DopingM. Fathipour0M. H. Refan1S. M. Ebrahimi2 High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been investigated.http://ijeee.iust.ac.ir/browse.php?a_code=A-10-222-2&slc_lang=en&sid=1Natural Frequencies Pull-in Voltage Retrograde Channel Resonant Suspended Gate (RSG) MOSFET. |
| spellingShingle | M. Fathipour M. H. Refan S. M. Ebrahimi Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping Iranian Journal of Electrical and Electronic Engineering Natural Frequencies Pull-in Voltage Retrograde Channel Resonant Suspended Gate (RSG) MOSFET. |
| title | Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping |
| title_full | Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping |
| title_fullStr | Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping |
| title_full_unstemmed | Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping |
| title_short | Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping |
| title_sort | design of a resonant suspended gate mosfet with retrograde channel doping |
| topic | Natural Frequencies Pull-in Voltage Retrograde Channel Resonant Suspended Gate (RSG) MOSFET. |
| url | http://ijeee.iust.ac.ir/browse.php?a_code=A-10-222-2&slc_lang=en&sid=1 |
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