Elemental Doping and Interface Effects on Spin–Orbit Torques in CoSi‐Based Topological Semimetal Thin Films
Abstract This work reports on Ni and Fe doping and interface effects on spin–orbit torques (SOTs) generated from a topological semimetal CoSi. CoSi thin films grown on Al2O3(0001) substrates by magnetron co‐sputtering show the B20 structure with a texture in the [210] orientation even after Ni or Fe...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2022-12-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202201332 |
| _version_ | 1797730877223993344 |
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| author | Ke Tang Zhenchao Wen Takeshi Seki Hiroaki Sukegawa Seiji Mitani |
| author_facet | Ke Tang Zhenchao Wen Takeshi Seki Hiroaki Sukegawa Seiji Mitani |
| author_sort | Ke Tang |
| collection | DOAJ |
| description | Abstract This work reports on Ni and Fe doping and interface effects on spin–orbit torques (SOTs) generated from a topological semimetal CoSi. CoSi thin films grown on Al2O3(0001) substrates by magnetron co‐sputtering show the B20 structure with a texture in the [210] orientation even after Ni or Fe doping. The SOTs from the films exerted on the magnetization of a CoFeB layer are evaluated by harmonic Hall and spin‐torque ferromagnetic resonance measurements. The spin Hall efficiency ξSH of the textured B20‐CoSi at room temperature is determined to be 9.6%, which decreases to 1.8% for Ni0.15Co0.85Si and to 5.5% for Fe0.26Co0.74Si. The electrical conductivity dependence of the spin Hall conductivity is assigned to the regime of intrinsic mechanism of spin Hall effect, suggesting that the reduction of ξSH with the element doping can be due to the degradation in topological electronic structures of CoSi. Furthermore, inserting a Cu layer at the Co(Ni, Fe)Si/CoFeB interface results in an increase of the ξSH up to 10.9% for CoSi, 4.0% for Ni0.15Co0.85Si, and 8.3% for Fe0.26Co0.74Si. These enhancements of the ξSH can be attributed to the improvement in the interfacial spin transparency between the Co(Ni, Fe)Si and CoFeB layers. |
| first_indexed | 2024-03-12T11:50:33Z |
| format | Article |
| id | doaj.art-5e423ac85c264af098961fa17bd1ca4f |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T11:50:33Z |
| publishDate | 2022-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-5e423ac85c264af098961fa17bd1ca4f2023-08-31T08:56:15ZengWiley-VCHAdvanced Materials Interfaces2196-73502022-12-01936n/an/a10.1002/admi.202201332Elemental Doping and Interface Effects on Spin–Orbit Torques in CoSi‐Based Topological Semimetal Thin FilmsKe Tang0Zhenchao Wen1Takeshi Seki2Hiroaki Sukegawa3Seiji Mitani4National Institute for Materials Science Tsukuba 305‐0047 JapanNational Institute for Materials Science Tsukuba 305‐0047 JapanInstitute for Materials Research Tohoku University Sendai 980‐8577 JapanNational Institute for Materials Science Tsukuba 305‐0047 JapanNational Institute for Materials Science Tsukuba 305‐0047 JapanAbstract This work reports on Ni and Fe doping and interface effects on spin–orbit torques (SOTs) generated from a topological semimetal CoSi. CoSi thin films grown on Al2O3(0001) substrates by magnetron co‐sputtering show the B20 structure with a texture in the [210] orientation even after Ni or Fe doping. The SOTs from the films exerted on the magnetization of a CoFeB layer are evaluated by harmonic Hall and spin‐torque ferromagnetic resonance measurements. The spin Hall efficiency ξSH of the textured B20‐CoSi at room temperature is determined to be 9.6%, which decreases to 1.8% for Ni0.15Co0.85Si and to 5.5% for Fe0.26Co0.74Si. The electrical conductivity dependence of the spin Hall conductivity is assigned to the regime of intrinsic mechanism of spin Hall effect, suggesting that the reduction of ξSH with the element doping can be due to the degradation in topological electronic structures of CoSi. Furthermore, inserting a Cu layer at the Co(Ni, Fe)Si/CoFeB interface results in an increase of the ξSH up to 10.9% for CoSi, 4.0% for Ni0.15Co0.85Si, and 8.3% for Fe0.26Co0.74Si. These enhancements of the ξSH can be attributed to the improvement in the interfacial spin transparency between the Co(Ni, Fe)Si and CoFeB layers.https://doi.org/10.1002/admi.202201332elemental dopinginterfacesspin–orbit torquestopological semimetals |
| spellingShingle | Ke Tang Zhenchao Wen Takeshi Seki Hiroaki Sukegawa Seiji Mitani Elemental Doping and Interface Effects on Spin–Orbit Torques in CoSi‐Based Topological Semimetal Thin Films Advanced Materials Interfaces elemental doping interfaces spin–orbit torques topological semimetals |
| title | Elemental Doping and Interface Effects on Spin–Orbit Torques in CoSi‐Based Topological Semimetal Thin Films |
| title_full | Elemental Doping and Interface Effects on Spin–Orbit Torques in CoSi‐Based Topological Semimetal Thin Films |
| title_fullStr | Elemental Doping and Interface Effects on Spin–Orbit Torques in CoSi‐Based Topological Semimetal Thin Films |
| title_full_unstemmed | Elemental Doping and Interface Effects on Spin–Orbit Torques in CoSi‐Based Topological Semimetal Thin Films |
| title_short | Elemental Doping and Interface Effects on Spin–Orbit Torques in CoSi‐Based Topological Semimetal Thin Films |
| title_sort | elemental doping and interface effects on spin orbit torques in cosi based topological semimetal thin films |
| topic | elemental doping interfaces spin–orbit torques topological semimetals |
| url | https://doi.org/10.1002/admi.202201332 |
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