Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap...

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Main Authors: Subhajit Biswas, Jessica Doherty, Dzianis Saladukha, Quentin Ramasse, Dipanwita Majumdar, Moneesh Upmanyu, Achintya Singha, Tomasz Ochalski, Michael A. Morris, Justin D. Holmes
Format: Article
Language:English
Published: Nature Portfolio 2016-04-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms11405
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author Subhajit Biswas
Jessica Doherty
Dzianis Saladukha
Quentin Ramasse
Dipanwita Majumdar
Moneesh Upmanyu
Achintya Singha
Tomasz Ochalski
Michael A. Morris
Justin D. Holmes
author_facet Subhajit Biswas
Jessica Doherty
Dzianis Saladukha
Quentin Ramasse
Dipanwita Majumdar
Moneesh Upmanyu
Achintya Singha
Tomasz Ochalski
Michael A. Morris
Justin D. Holmes
author_sort Subhajit Biswas
collection DOAJ
description Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap.
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spelling doaj.art-5e60bb3adf1b4912ad37a844fb038f4b2022-12-21T23:08:56ZengNature PortfolioNature Communications2041-17232016-04-017111210.1038/ncomms11405Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowiresSubhajit Biswas0Jessica Doherty1Dzianis Saladukha2Quentin Ramasse3Dipanwita Majumdar4Moneesh Upmanyu5Achintya Singha6Tomasz Ochalski7Michael A. Morris8Justin D. Holmes9Department of Chemistry, Materials Chemistry & Analysis Group, Tyndall National Institute, University College CorkDepartment of Chemistry, Materials Chemistry & Analysis Group, Tyndall National Institute, University College CorkDepartment of Photonics, Tyndall National Institute, University College CorkSuperSTEM Laboratory, SciTech Daresbury CampusDepartment of Physics, Bose InstituteDepartment of Mechanical and Industrial Engineering and Department of Bioengineering, Group for Simulation and Theory of Atomic-Scale Material Phenomena (stAMP), Northeastern UniversityDepartment of Physics, Bose InstituteDepartment of Photonics, Tyndall National Institute, University College CorkAMBER, CRANN, Trinity College DublinDepartment of Chemistry, Materials Chemistry & Analysis Group, Tyndall National Institute, University College CorkDirect band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap.https://doi.org/10.1038/ncomms11405
spellingShingle Subhajit Biswas
Jessica Doherty
Dzianis Saladukha
Quentin Ramasse
Dipanwita Majumdar
Moneesh Upmanyu
Achintya Singha
Tomasz Ochalski
Michael A. Morris
Justin D. Holmes
Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
Nature Communications
title Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_full Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_fullStr Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_full_unstemmed Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_short Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
title_sort non equilibrium induction of tin in germanium towards direct bandgap ge1 xsnx nanowires
url https://doi.org/10.1038/ncomms11405
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