Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap...

Full description

Bibliographic Details
Main Authors:	Subhajit Biswas, Jessica Doherty, Dzianis Saladukha, Quentin Ramasse, Dipanwita Majumdar, Moneesh Upmanyu, Achintya Singha, Tomasz Ochalski, Michael A. Morris, Justin D. Holmes
Format:	Article
Language:	English
Published:	Nature Portfolio 2016-04-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/ncomms11405

Similar Items

Facile synthesis of Ge1−xSnx nanowires
by: Ying Xu, et al.
Published: (2020-01-01)

The theoretical optical gain of Ge1−xSnx nanowires
by: Xiong, Wen, et al.
Published: (2020)

The physical properties of (As2Se3)1-x:Snx and (As4S3Se3)1-x:Snx glasses
by: Iaseniuc, Oxana, et al.
Published: (2013-06-01)

Electronic band structure of Ge1-xSnx alloys
by: Yu, Cunyang
Published: (2018)

Phase-field investigation of the stages in radial growth of core–shell Ge/Ge1−xSnx nanowires
by: Wang, Yanming
Published: (2020)

Thermal conductivity of Mg2Si1−xSnx nanowire assemblies synthesized using solid-state phase transformation of silicon nanowires
by: Azhar Ali, et al.
Published: (2021-01-01)

A Study of the Effectiveness of Tin on the Thermal Conductivity Coefficient and Electrical Resistance of Se60Te40-xSnx Chalcogenide Glass
by: Nawal H. Khudhair, et al.
Published: (2023-01-01)

Electronic band structure and effective mass parameters of Ge1−xSnx alloys
by: Low, Kain Lu, et al.
Published: (2013)

Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004)
by: Ping Tao, et al.
Published: (2020-01-01)

Electrical and morphological study of thermally evaporated (Sb2S3)1-xSnx thin films
by: Bushra A. Hasan
Published: (2019-02-01)

Flexible titanium nitride/germanium-tin photodetectors based on sub-bandgap absorption
by: An, Shu, et al.
Published: (2022)

Research of the first-principle of electronic structure and optical properties of Ba(Ti1-xSnx)O3
by: LI Han-jun, et al.
Published: (2013-10-01)

Photoconductivity and light induced phenomena in amorphous (as4s3se3)1-x:snx thin films
by: Iaseniuc, Oxana, et al.
Published: (2014-12-01)

Band structure of Ge1−xSnx alloy: a full-zone 30-band k · p model
by: Zhigang Song, et al.
Published: (2019-01-01)

Effects of uniaxial strain on electron effective mass and tunneling capability of direct gap Ge1−xSnx alloys
by: Lei Liu, et al.
Published: (2016-01-01)

Incommensurately modulated structures in Pb(Zr1−xSnx)O3 single crystals by x-ray diffraction
by: Irena Jankowska-Sumara, et al.
Published: (2021-02-01)

Thick Film Ni0.5Mn0.5−xSnx Heusler Alloys by Multi-layer Electrochemical Deposition
by: Yijia Zhang, et al.
Published: (2018-08-01)

Optically and thermally induced modifications of the optical constants of amorphous(as4s3se3)1-x:snx thin films
by: Iaseniuc, Oxana, et al.
Published: (2014-12-01)

Large electrocaloric effect in Ba(Ti1−xSnx)O3 ceramics over a broad temperature region
by: X. Zhang, et al.
Published: (2015-04-01)

First-principle calculations of structural, electronic and magnetic investigations of Mn2RuGe1-xSnx quaternary Heusler alloys
by: Semari, F., et al.
Published: (2018)

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties
by: Ruidan Zhong, et al.
Published: (2017-02-01)

Structural, optical and microwave dielectric properties of Ba(Ti1−xSnx)4O9, 0 ≤ x ≤ 0.7 ceramics
by: Asad Ali, et al.
Published: (2021-09-01)

Evolution from 4f-electron antiferromagnetic to ferromagnetic order in the CeCu(Ge1−xSnx) alloy series (0≤x≤1)
by: A. Altayeb, et al.
Published: (2017-05-01)

Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap
by: Sen Gao, et al.
Published: (2022-06-01)

Direct bandgap emission from strain-doped germanium
by: Lin-Ding Yuan, et al.
Published: (2024-01-01)

The chemistry of germanium, tin and lead /
by: Rochow, Eugene George, 1909-, et al.
Published: (1973)

Catalytic growth of germanium oxide nanowires, nanotubes, and germanium nanowires : temperature-dependent effect
by: Yan, Chaoyi, et al.
Published: (2012)

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications
by: Adrià Garcia-Gil, et al.
Published: (2021-08-01)

AC losses in Sn-doped Bi1.6Pb0.4Sr2(Ca1-xSnx)2Cu3Oδ superconductors
by: Hashim @ Ismail, Azhan, et al.
Published: (2014)

Corrigendum: Band structure of Ge1−xSnx alloy: a full-zone 30-band k · p model (2019 New J. Phys. 21 073037)
by: Zhigang Song, et al.
Published: (2020-01-01)

Organometallic compounds of germanium, tin and lead/
by: Harrison, P. G., 1943-
Published: (1985)

INTERACTION OF SELENOUREAS WITH TIN AND GERMANIUM DERIVATIVES
by: Fregona, D., et al.
Published: (1995-06-01)

Bandgap engineering of GaN nanowires
by: Bang-Ming Ming, et al.
Published: (2016-05-01)

Young’s modulus of [111] germanium nanowires
by: M. Maksud, et al.
Published: (2015-11-01)

Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides
by: Ray Samit, et al.
Published: (2011-01-01)

Electronic structure studies of germanium, tin and their alloy
by: Lim, Dali.
Published: (2009)

STABLE MULTIPLY-BONDED GERMANIUM AND TIN SPECIES
by: Escudié, Jean, et al.
Published: (1994-05-01)

Investigation of germanium and germanium-tin laser technologies towards electronic-photonic integrated circuits
by: Jung, Yongduck
Published: (2022)

Modeling of the Bandgap Distribution in Bi-Axially Strained Germanium Crossbeam for Laser Applications
by: Alban Gassenq, et al.
Published: (2022-01-01)

Thermal stability of germanium-tin (GeSn) fins
by: Lei, Dian, et al.
Published: (2018)