Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices
This paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combining silicon (Si), silicon carbide (SiC), and gallium...
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MDPI AG
2020-11-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/11/1982 |
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| author | Oscar Miguel Rodríguez-Benítez Mario Ponce-Silva Juan Antonio Aquí-Tapia Abraham Claudio-Sánchez Luis Gerardo Vela-Váldes Ricardo Eliu Lozoya-Ponce Claudia Cortés-García |
| author_facet | Oscar Miguel Rodríguez-Benítez Mario Ponce-Silva Juan Antonio Aquí-Tapia Abraham Claudio-Sánchez Luis Gerardo Vela-Váldes Ricardo Eliu Lozoya-Ponce Claudia Cortés-García |
| author_sort | Oscar Miguel Rodríguez-Benítez |
| collection | DOAJ |
| description | This paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)-based power devices. The results show that unidirectional switches (metal–oxide–semiconductor field-effect transistors (MOSFETs) plus diode) present hard switching as a result of the diode preventing the MOSFET capacitance of being discharged. The effectiveness of the converter was verified with a 200-W prototype with an input voltage range of 0–30.3 V, an output voltage of 200 V, and a switching frequency of 200 kHz. The reduction losses by applying GaN versus Si and SiC technologies are 66.49% and 53.57%, respectively. Alternatively, by applying SiC versus Si devices the reduction loss is 27.84%. Finally, according to the results, 60% of losses were caused by the diodes on both switches. |
| first_indexed | 2024-03-10T14:37:51Z |
| format | Article |
| id | doaj.art-5e6ae35d402f4283b38a56811121dad6 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T14:37:51Z |
| publishDate | 2020-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-5e6ae35d402f4283b38a56811121dad62023-11-20T22:01:55ZengMDPI AGElectronics2079-92922020-11-01911198210.3390/electronics9111982Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor DevicesOscar Miguel Rodríguez-Benítez0Mario Ponce-Silva1Juan Antonio Aquí-Tapia2Abraham Claudio-Sánchez3Luis Gerardo Vela-Váldes4Ricardo Eliu Lozoya-Ponce5Claudia Cortés-García6Department of Electronics Engineering, National Technology of Mexico—CENIDET, Morelos 62490, MexicoDepartment of Electronics Engineering, National Technology of Mexico—CENIDET, Morelos 62490, MexicoResearch and Development Department, OSRAM, Monterrey 66600, MexicoDepartment of Electronics Engineering, National Technology of Mexico—CENIDET, Morelos 62490, MexicoDepartment of Electronics Engineering, National Technology of Mexico—CENIDET, Morelos 62490, MexicoGraduate Studies and Research Division, National Technology of Mexico—IT Chihuahua, Chihuahua 31310, MexicoDepartment of Electronics Engineering, National Technology of Mexico—CENIDET, Morelos 62490, MexicoThis paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)-based power devices. The results show that unidirectional switches (metal–oxide–semiconductor field-effect transistors (MOSFETs) plus diode) present hard switching as a result of the diode preventing the MOSFET capacitance of being discharged. The effectiveness of the converter was verified with a 200-W prototype with an input voltage range of 0–30.3 V, an output voltage of 200 V, and a switching frequency of 200 kHz. The reduction losses by applying GaN versus Si and SiC technologies are 66.49% and 53.57%, respectively. Alternatively, by applying SiC versus Si devices the reduction loss is 27.84%. Finally, according to the results, 60% of losses were caused by the diodes on both switches.https://www.mdpi.com/2079-9292/9/11/1982current-fed DC-DC resonant convertersemiconductorsparallel resonant tankphotovoltaic systems |
| spellingShingle | Oscar Miguel Rodríguez-Benítez Mario Ponce-Silva Juan Antonio Aquí-Tapia Abraham Claudio-Sánchez Luis Gerardo Vela-Váldes Ricardo Eliu Lozoya-Ponce Claudia Cortés-García Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices Electronics current-fed DC-DC resonant converter semiconductors parallel resonant tank photovoltaic systems |
| title | Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices |
| title_full | Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices |
| title_fullStr | Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices |
| title_full_unstemmed | Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices |
| title_short | Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices |
| title_sort | comparative performance and assessment study of a current fed dc dc resonant converter combining si sic and gan based power semiconductor devices |
| topic | current-fed DC-DC resonant converter semiconductors parallel resonant tank photovoltaic systems |
| url | https://www.mdpi.com/2079-9292/9/11/1982 |
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