Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency
The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other devices. There are several challenges in growing high-quality InGaN materials, including the lattice mismatch between...
| Main Authors: | , , , , |
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| Format: | Article |
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MDPI AG
2023-11-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/12/1623 |
| _version_ | 1797381514189602816 |
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| author | Naveed Jafar Jianliang Jiang Heng Lu Muhammad Qasim Hengli Zhang |
| author_facet | Naveed Jafar Jianliang Jiang Heng Lu Muhammad Qasim Hengli Zhang |
| author_sort | Naveed Jafar |
| collection | DOAJ |
| description | The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other devices. There are several challenges in growing high-quality InGaN materials, including the lattice mismatch between GaN and InGaN causing stress and piezoelectric polarization, the relatively high vapor pressure of InN compared to GaN, and the low level of incorporation of indium in InGaN materials. Furthermore, carrier delocalization, Shockley–Read–Hall recombination, auger recombination, and electron leakage in InGaN light-emitting diodes (LEDs) are the main contributors to efficiency droop. The synthesis of high-quality III-V compounds can be achieved by optimizing growth parameters such as temperature, V/III ratios, growth rate, and pressure. By reducing the ammonia flow from 200 sccm to 50 sccm, increasing the growth rate from 0.1 to 1 m/h, and lowering the growth pressure from 250 to 150 Torr, the external quantum efficiency of III-V compounds can be improved at growth temperatures ranging from 800 °C to 500 °C. It is crucial to optimize the growth conditions to achieve high-quality materials. In addition, novel approaches such as adopting a microrod crystal structure, utilizing the piezo-phototronic effect, and depositing AlN/Al<sub>2</sub>O<sub>3</sub> on top of the P-GaN and the electron-blocking layer can also contribute to improving the external quantum efficiency. The deposition of a multifunctional ultrathin layers of AlN/Al<sub>2</sub>O<sub>3</sub> on top of the P-GaN can enhance the peak external quantum efficiency of InGaN blue LEDs by 29%, while the piezo-phototronic effect induced by a tensile strain of 2.04% results in a 183% increase in the relative electroluminescence intensity of the LEDs. This paper also discusses conventional and inverted p-i-n junction structures of LEDs. |
| first_indexed | 2024-03-08T20:52:40Z |
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| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-08T20:52:40Z |
| publishDate | 2023-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-5e6f923090e0410694ba80641e07d7902023-12-22T14:01:48ZengMDPI AGCrystals2073-43522023-11-011312162310.3390/cryst13121623Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum EfficiencyNaveed Jafar0Jianliang Jiang1Heng Lu2Muhammad Qasim3Hengli Zhang4School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, ChinaSchool of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, ChinaSchool of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, ChinaSchool of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, ChinaSchool of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, ChinaThe optimization of the synthesis of III-V compounds is a crucial subject in enhancing the external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other devices. There are several challenges in growing high-quality InGaN materials, including the lattice mismatch between GaN and InGaN causing stress and piezoelectric polarization, the relatively high vapor pressure of InN compared to GaN, and the low level of incorporation of indium in InGaN materials. Furthermore, carrier delocalization, Shockley–Read–Hall recombination, auger recombination, and electron leakage in InGaN light-emitting diodes (LEDs) are the main contributors to efficiency droop. The synthesis of high-quality III-V compounds can be achieved by optimizing growth parameters such as temperature, V/III ratios, growth rate, and pressure. By reducing the ammonia flow from 200 sccm to 50 sccm, increasing the growth rate from 0.1 to 1 m/h, and lowering the growth pressure from 250 to 150 Torr, the external quantum efficiency of III-V compounds can be improved at growth temperatures ranging from 800 °C to 500 °C. It is crucial to optimize the growth conditions to achieve high-quality materials. In addition, novel approaches such as adopting a microrod crystal structure, utilizing the piezo-phototronic effect, and depositing AlN/Al<sub>2</sub>O<sub>3</sub> on top of the P-GaN and the electron-blocking layer can also contribute to improving the external quantum efficiency. The deposition of a multifunctional ultrathin layers of AlN/Al<sub>2</sub>O<sub>3</sub> on top of the P-GaN can enhance the peak external quantum efficiency of InGaN blue LEDs by 29%, while the piezo-phototronic effect induced by a tensile strain of 2.04% results in a 183% increase in the relative electroluminescence intensity of the LEDs. This paper also discusses conventional and inverted p-i-n junction structures of LEDs.https://www.mdpi.com/2073-4352/13/12/1623InGaN materialsblue LEDslaser diodesexternal quantum efficiencypiezo-phototronic effect |
| spellingShingle | Naveed Jafar Jianliang Jiang Heng Lu Muhammad Qasim Hengli Zhang Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency Crystals InGaN materials blue LEDs laser diodes external quantum efficiency piezo-phototronic effect |
| title | Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency |
| title_full | Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency |
| title_fullStr | Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency |
| title_full_unstemmed | Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency |
| title_short | Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency |
| title_sort | recent research on indium gallium nitride based light emitting diodes growth conditions and external quantum efficiency |
| topic | InGaN materials blue LEDs laser diodes external quantum efficiency piezo-phototronic effect |
| url | https://www.mdpi.com/2073-4352/13/12/1623 |
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