Understanding of Feedback Field-Effect Transistor and Its Applications

Feedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in which the electrons and holes in the channel region act on the energy states of the potential barrier and wall. Owing to the positive feedback phenomenon, FBFETs have an excellent subthreshold swing (~0 mV/de...

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Main Authors: Changhoon Lee, Juho Sung, Changhwan Shin
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/10/9/3070
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author Changhoon Lee
Juho Sung
Changhwan Shin
author_facet Changhoon Lee
Juho Sung
Changhwan Shin
author_sort Changhoon Lee
collection DOAJ
description Feedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in which the electrons and holes in the channel region act on the energy states of the potential barrier and wall. Owing to the positive feedback phenomenon, FBFETs have an excellent subthreshold swing (~0 mV/decade at 300 K), a high on-/off current ratio (~10<sup>10</sup>), and a clear saturation region. The power consumption of both the turn-on state and turn-off state is significantly low until operation commences. In addition, the hysteresis caused by the carriers accumulated in the potential wall allows the FBFET to act as a memory device. Moreover, the power consumption of neuromorphic devices can be suppressed by ~100 times with the use of FBFETs. In this work, we analyze the device structure and operating principle of the FBFET and summarize its applications.
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spelling doaj.art-5e77e1c32e134cce90172f0f9acb77182023-11-19T22:56:59ZengMDPI AGApplied Sciences2076-34172020-04-01109307010.3390/app10093070Understanding of Feedback Field-Effect Transistor and Its ApplicationsChanghoon Lee0Juho Sung1Changhwan Shin2Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, KoreaFeedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in which the electrons and holes in the channel region act on the energy states of the potential barrier and wall. Owing to the positive feedback phenomenon, FBFETs have an excellent subthreshold swing (~0 mV/decade at 300 K), a high on-/off current ratio (~10<sup>10</sup>), and a clear saturation region. The power consumption of both the turn-on state and turn-off state is significantly low until operation commences. In addition, the hysteresis caused by the carriers accumulated in the potential wall allows the FBFET to act as a memory device. Moreover, the power consumption of neuromorphic devices can be suppressed by ~100 times with the use of FBFETs. In this work, we analyze the device structure and operating principle of the FBFET and summarize its applications.https://www.mdpi.com/2076-3417/10/9/3070positive feedbacksteep-switching devicefeedback field-effect transistorlow power applicationneuromorphic computingintegrate-and-fire
spellingShingle Changhoon Lee
Juho Sung
Changhwan Shin
Understanding of Feedback Field-Effect Transistor and Its Applications
Applied Sciences
positive feedback
steep-switching device
feedback field-effect transistor
low power application
neuromorphic computing
integrate-and-fire
title Understanding of Feedback Field-Effect Transistor and Its Applications
title_full Understanding of Feedback Field-Effect Transistor and Its Applications
title_fullStr Understanding of Feedback Field-Effect Transistor and Its Applications
title_full_unstemmed Understanding of Feedback Field-Effect Transistor and Its Applications
title_short Understanding of Feedback Field-Effect Transistor and Its Applications
title_sort understanding of feedback field effect transistor and its applications
topic positive feedback
steep-switching device
feedback field-effect transistor
low power application
neuromorphic computing
integrate-and-fire
url https://www.mdpi.com/2076-3417/10/9/3070
work_keys_str_mv AT changhoonlee understandingoffeedbackfieldeffecttransistoranditsapplications
AT juhosung understandingoffeedbackfieldeffecttransistoranditsapplications
AT changhwanshin understandingoffeedbackfieldeffecttransistoranditsapplications