Understanding of Feedback Field-Effect Transistor and Its Applications
Feedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in which the electrons and holes in the channel region act on the energy states of the potential barrier and wall. Owing to the positive feedback phenomenon, FBFETs have an excellent subthreshold swing (~0 mV/de...
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MDPI AG
2020-04-01
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author | Changhoon Lee Juho Sung Changhwan Shin |
author_facet | Changhoon Lee Juho Sung Changhwan Shin |
author_sort | Changhoon Lee |
collection | DOAJ |
description | Feedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in which the electrons and holes in the channel region act on the energy states of the potential barrier and wall. Owing to the positive feedback phenomenon, FBFETs have an excellent subthreshold swing (~0 mV/decade at 300 K), a high on-/off current ratio (~10<sup>10</sup>), and a clear saturation region. The power consumption of both the turn-on state and turn-off state is significantly low until operation commences. In addition, the hysteresis caused by the carriers accumulated in the potential wall allows the FBFET to act as a memory device. Moreover, the power consumption of neuromorphic devices can be suppressed by ~100 times with the use of FBFETs. In this work, we analyze the device structure and operating principle of the FBFET and summarize its applications. |
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institution | Directory Open Access Journal |
issn | 2076-3417 |
language | English |
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publishDate | 2020-04-01 |
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spelling | doaj.art-5e77e1c32e134cce90172f0f9acb77182023-11-19T22:56:59ZengMDPI AGApplied Sciences2076-34172020-04-01109307010.3390/app10093070Understanding of Feedback Field-Effect Transistor and Its ApplicationsChanghoon Lee0Juho Sung1Changhwan Shin2Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, KoreaFeedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in which the electrons and holes in the channel region act on the energy states of the potential barrier and wall. Owing to the positive feedback phenomenon, FBFETs have an excellent subthreshold swing (~0 mV/decade at 300 K), a high on-/off current ratio (~10<sup>10</sup>), and a clear saturation region. The power consumption of both the turn-on state and turn-off state is significantly low until operation commences. In addition, the hysteresis caused by the carriers accumulated in the potential wall allows the FBFET to act as a memory device. Moreover, the power consumption of neuromorphic devices can be suppressed by ~100 times with the use of FBFETs. In this work, we analyze the device structure and operating principle of the FBFET and summarize its applications.https://www.mdpi.com/2076-3417/10/9/3070positive feedbacksteep-switching devicefeedback field-effect transistorlow power applicationneuromorphic computingintegrate-and-fire |
spellingShingle | Changhoon Lee Juho Sung Changhwan Shin Understanding of Feedback Field-Effect Transistor and Its Applications Applied Sciences positive feedback steep-switching device feedback field-effect transistor low power application neuromorphic computing integrate-and-fire |
title | Understanding of Feedback Field-Effect Transistor and Its Applications |
title_full | Understanding of Feedback Field-Effect Transistor and Its Applications |
title_fullStr | Understanding of Feedback Field-Effect Transistor and Its Applications |
title_full_unstemmed | Understanding of Feedback Field-Effect Transistor and Its Applications |
title_short | Understanding of Feedback Field-Effect Transistor and Its Applications |
title_sort | understanding of feedback field effect transistor and its applications |
topic | positive feedback steep-switching device feedback field-effect transistor low power application neuromorphic computing integrate-and-fire |
url | https://www.mdpi.com/2076-3417/10/9/3070 |
work_keys_str_mv | AT changhoonlee understandingoffeedbackfieldeffecttransistoranditsapplications AT juhosung understandingoffeedbackfieldeffecttransistoranditsapplications AT changhwanshin understandingoffeedbackfieldeffecttransistoranditsapplications |