Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots
Erbium-doped silicon (Er-doped Si) materials hold great potential for advancing Si photonic devices. For Er-doped Si, the efficiency of energy transfer (<i>η<sub>ET</sub></i>) from Si to Er<sup>3+</sup> is crucial. In order to achieve high <i>η<sub>ET&...
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MDPI AG
2023-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/2/277 |
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| author | Kun Wang Qiang He Deren Yang Xiaodong Pi |
| author_facet | Kun Wang Qiang He Deren Yang Xiaodong Pi |
| author_sort | Kun Wang |
| collection | DOAJ |
| description | Erbium-doped silicon (Er-doped Si) materials hold great potential for advancing Si photonic devices. For Er-doped Si, the efficiency of energy transfer (<i>η<sub>ET</sub></i>) from Si to Er<sup>3+</sup> is crucial. In order to achieve high <i>η<sub>ET</sub></i>, we used nonthermal plasma to synthesize Si quantum dots (QDs) hyperdoped with Er at the concentration of ~1% (i.e., ~5 × 10<sup>20</sup> cm<sup>−3</sup>). The QD surface was subsequently modified by hydrosilylation using 1-dodecene. The Er-hyperdoped Si QDs emitted near-infrared (NIR) light at wavelengths of ~830 and ~1540 nm. An ultrahigh <i>η<sub>ET</sub></i> (~93%) was obtained owing to the effective energy transfer from Si QDs to Er<sup>3+</sup>, which led to the weakening of the NIR emission at ~830 nm and the enhancement of the NIR emission at ~1540 nm. The coupling constant (<i>γ</i>) between Si QDs and Er<sup>3+</sup> was comparable to or greater than 1.8 × 10<sup>−12</sup> cm<sup>3</sup>·s<sup>−1</sup>. The temperature-dependent photoluminescence and excitation rate of Er-hyperdoped Si QDs indicate that strong coupling between Si QDs and Er<sup>3+</sup> allows Er<sup>3+</sup> to be efficiently excited. |
| first_indexed | 2024-03-09T11:33:30Z |
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| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T11:33:30Z |
| publishDate | 2023-01-01 |
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| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-5e7b516b3dc641db844db124bfb060002023-11-30T23:47:36ZengMDPI AGNanomaterials2079-49912023-01-0113227710.3390/nano13020277Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum DotsKun Wang0Qiang He1Deren Yang2Xiaodong Pi3State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, ChinaErbium-doped silicon (Er-doped Si) materials hold great potential for advancing Si photonic devices. For Er-doped Si, the efficiency of energy transfer (<i>η<sub>ET</sub></i>) from Si to Er<sup>3+</sup> is crucial. In order to achieve high <i>η<sub>ET</sub></i>, we used nonthermal plasma to synthesize Si quantum dots (QDs) hyperdoped with Er at the concentration of ~1% (i.e., ~5 × 10<sup>20</sup> cm<sup>−3</sup>). The QD surface was subsequently modified by hydrosilylation using 1-dodecene. The Er-hyperdoped Si QDs emitted near-infrared (NIR) light at wavelengths of ~830 and ~1540 nm. An ultrahigh <i>η<sub>ET</sub></i> (~93%) was obtained owing to the effective energy transfer from Si QDs to Er<sup>3+</sup>, which led to the weakening of the NIR emission at ~830 nm and the enhancement of the NIR emission at ~1540 nm. The coupling constant (<i>γ</i>) between Si QDs and Er<sup>3+</sup> was comparable to or greater than 1.8 × 10<sup>−12</sup> cm<sup>3</sup>·s<sup>−1</sup>. The temperature-dependent photoluminescence and excitation rate of Er-hyperdoped Si QDs indicate that strong coupling between Si QDs and Er<sup>3+</sup> allows Er<sup>3+</sup> to be efficiently excited.https://www.mdpi.com/2079-4991/13/2/277nonthermal plasmaEr-hyperdoped Si QDsefficiency of energy transfercoupling constantstrong coupling |
| spellingShingle | Kun Wang Qiang He Deren Yang Xiaodong Pi Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots Nanomaterials nonthermal plasma Er-hyperdoped Si QDs efficiency of energy transfer coupling constant strong coupling |
| title | Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots |
| title_full | Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots |
| title_fullStr | Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots |
| title_full_unstemmed | Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots |
| title_short | Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots |
| title_sort | highly efficient energy transfer from silicon to erbium in erbium hyperdoped silicon quantum dots |
| topic | nonthermal plasma Er-hyperdoped Si QDs efficiency of energy transfer coupling constant strong coupling |
| url | https://www.mdpi.com/2079-4991/13/2/277 |
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