High-Quality Single-Crystalline <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanowires: Synthesis to Nonvolatile Memory Applications
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a n...
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MDPI AG
2021-08-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/8/2013 |
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| author | Chandrasekar Sivakumar Gang-Han Tsai Pei-Fang Chung Babu Balraj Yen-Fu Lin Mon-Shu Ho |
| author_facet | Chandrasekar Sivakumar Gang-Han Tsai Pei-Fang Chung Babu Balraj Yen-Fu Lin Mon-Shu Ho |
| author_sort | Chandrasekar Sivakumar |
| collection | DOAJ |
| description | One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly, <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> is one of the promising materials for high-power electronics and exhibits the resistive switching phenomenon. However, low-dimensional <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanowires have not been explored in resistive memory applications, which hinders further developments. In this article, we studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed possible resistive switching and electron conduction mechanisms. High-density <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> 1D-nanowires on Si (100) substrates were produced via the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics were analyzed via SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses confirmed the composition of individual elements, the possible intermediate absorption sites in the bandgap, and the bonding characteristics, along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and the possible electron conduction mechanisms in HRS and LRS states are discussed. |
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| last_indexed | 2024-03-10T08:32:12Z |
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| series | Nanomaterials |
| spelling | doaj.art-5e7dd9b58040431fa3835d95b1d582332023-11-22T08:59:10ZengMDPI AGNanomaterials2079-49912021-08-01118201310.3390/nano11082013High-Quality Single-Crystalline <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanowires: Synthesis to Nonvolatile Memory ApplicationsChandrasekar Sivakumar0Gang-Han Tsai1Pei-Fang Chung2Babu Balraj3Yen-Fu Lin4Mon-Shu Ho5Department of Physics, National Chung Hsing University, Taichung 40227, TaiwanInstitute of Nanoscience, National Chung Hsing University, Taichung 40227, TaiwanDepartment of Physics, National Chung Hsing University, Taichung 40227, TaiwanDepartment of Electrical Engineering, National Tsing Hua University, Hsinchu 300044, TaiwanDepartment of Physics, National Chung Hsing University, Taichung 40227, TaiwanDepartment of Physics, National Chung Hsing University, Taichung 40227, TaiwanOne of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly, <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> is one of the promising materials for high-power electronics and exhibits the resistive switching phenomenon. However, low-dimensional <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanowires have not been explored in resistive memory applications, which hinders further developments. In this article, we studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed possible resistive switching and electron conduction mechanisms. High-density <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> 1D-nanowires on Si (100) substrates were produced via the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics were analyzed via SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses confirmed the composition of individual elements, the possible intermediate absorption sites in the bandgap, and the bonding characteristics, along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and the possible electron conduction mechanisms in HRS and LRS states are discussed.https://www.mdpi.com/2079-4991/11/8/2013<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanowireVLS growthresistive memorynonvolatile memorySCLC |
| spellingShingle | Chandrasekar Sivakumar Gang-Han Tsai Pei-Fang Chung Babu Balraj Yen-Fu Lin Mon-Shu Ho High-Quality Single-Crystalline <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanowires: Synthesis to Nonvolatile Memory Applications Nanomaterials <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanowire VLS growth resistive memory nonvolatile memory SCLC |
| title | High-Quality Single-Crystalline <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanowires: Synthesis to Nonvolatile Memory Applications |
| title_full | High-Quality Single-Crystalline <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanowires: Synthesis to Nonvolatile Memory Applications |
| title_fullStr | High-Quality Single-Crystalline <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanowires: Synthesis to Nonvolatile Memory Applications |
| title_full_unstemmed | High-Quality Single-Crystalline <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanowires: Synthesis to Nonvolatile Memory Applications |
| title_short | High-Quality Single-Crystalline <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Nanowires: Synthesis to Nonvolatile Memory Applications |
| title_sort | high quality single crystalline i β i ga sub 2 sub o sub 3 sub nanowires synthesis to nonvolatile memory applications |
| topic | <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nanowire VLS growth resistive memory nonvolatile memory SCLC |
| url | https://www.mdpi.com/2079-4991/11/8/2013 |
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