Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack
The mechanism of irreversible resistive switching (RS) conversion from bipolar to unipolar operation is investigated in a capacitor structure, SrZrO3/TiOx/Pt, prepared on a Pt/Ti/SiO2/Si substrate. Bipolar RS memory current–voltage characteristics are observed in the RS voltage window from +2.5 V to...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2020-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0010045 |
| _version_ | 1819013819240808448 |
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| author | Hyunsu Ju Min Kyu Yang |
| author_facet | Hyunsu Ju Min Kyu Yang |
| author_sort | Hyunsu Ju |
| collection | DOAJ |
| description | The mechanism of irreversible resistive switching (RS) conversion from bipolar to unipolar operation is investigated in a capacitor structure, SrZrO3/TiOx/Pt, prepared on a Pt/Ti/SiO2/Si substrate. Bipolar RS memory current–voltage characteristics are observed in the RS voltage window from +2.5 V to −1.9 V, which shows excellent durability and retention characteristics. As the voltage bias is increased to greater than +4 V, an additional forming process occurs, irreversibly converting the RS mode from the bipolar to the unipolar mode. In this study, two materials are combined with different switching mechanisms to enable the fabrication of RS memory with desirable characteristics in different current regions. |
| first_indexed | 2024-12-21T02:06:00Z |
| format | Article |
| id | doaj.art-5ebdf3b82c6a4c89b477d0bade66d27e |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T02:06:00Z |
| publishDate | 2020-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-5ebdf3b82c6a4c89b477d0bade66d27e2022-12-21T19:19:29ZengAIP Publishing LLCAIP Advances2158-32262020-06-01106065221065221-510.1063/5.0010045Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stackHyunsu Ju0Min Kyu Yang1Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South KoreaDepartment of IT Convergence Engineering & Intelligent Electronic Device Lab, Sahmyook University, 815 Hwarang-ro, Nowon-Gu, Seoul 01795, South KoreaThe mechanism of irreversible resistive switching (RS) conversion from bipolar to unipolar operation is investigated in a capacitor structure, SrZrO3/TiOx/Pt, prepared on a Pt/Ti/SiO2/Si substrate. Bipolar RS memory current–voltage characteristics are observed in the RS voltage window from +2.5 V to −1.9 V, which shows excellent durability and retention characteristics. As the voltage bias is increased to greater than +4 V, an additional forming process occurs, irreversibly converting the RS mode from the bipolar to the unipolar mode. In this study, two materials are combined with different switching mechanisms to enable the fabrication of RS memory with desirable characteristics in different current regions.http://dx.doi.org/10.1063/5.0010045 |
| spellingShingle | Hyunsu Ju Min Kyu Yang Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack AIP Advances |
| title | Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack |
| title_full | Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack |
| title_fullStr | Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack |
| title_full_unstemmed | Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack |
| title_short | Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack |
| title_sort | duality characteristics of bipolar and unipolar resistive switching in a pt srzro3 tiox pt stack |
| url | http://dx.doi.org/10.1063/5.0010045 |
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