The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors
Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. Th...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2016-04-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/16/5/608 |
| _version_ | 1811185151566151680 |
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| author | Gerhard Lutz Matteo Porro Stefan Aschauer Stefan Wölfel Lothar Strüder |
| author_facet | Gerhard Lutz Matteo Porro Stefan Aschauer Stefan Wölfel Lothar Strüder |
| author_sort | Gerhard Lutz |
| collection | DOAJ |
| description | Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. |
| first_indexed | 2024-04-11T13:24:41Z |
| format | Article |
| id | doaj.art-5ebf6248bfb54d77a9a8748ca844dc5b |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-11T13:24:41Z |
| publishDate | 2016-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-5ebf6248bfb54d77a9a8748ca844dc5b2022-12-22T04:22:06ZengMDPI AGSensors1424-82202016-04-0116560810.3390/s16050608s16050608The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel DetectorsGerhard Lutz0Matteo Porro1Stefan Aschauer2Stefan Wölfel3Lothar Strüder4PNSENSOR GmbH, München D-81739, GermanyEuropean X-ray Free-Electron Laser Facility GmbH, Hamburg D-22761, GermanyPNSENSOR GmbH, München D-81739, GermanyGründeläckerstr. 28, Dormitz D-91077, GermanyPNSENSOR GmbH, München D-81739, GermanyDepleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell.http://www.mdpi.com/1424-8220/16/5/608DEPFETphoton detectionsub-electron precisioncharge measurementpixel detectorX-ray spectroscopy |
| spellingShingle | Gerhard Lutz Matteo Porro Stefan Aschauer Stefan Wölfel Lothar Strüder The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors Sensors DEPFET photon detection sub-electron precision charge measurement pixel detector X-ray spectroscopy |
| title | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
| title_full | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
| title_fullStr | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
| title_full_unstemmed | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
| title_short | The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors |
| title_sort | depfet sensor amplifier structure a method to beat 1 f noise and reach sub electron noise in pixel detectors |
| topic | DEPFET photon detection sub-electron precision charge measurement pixel detector X-ray spectroscopy |
| url | http://www.mdpi.com/1424-8220/16/5/608 |
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