Ferromagnetism in undoped One-dimensional GaN Nanowires

Ferromagnetism in undoped One-dimensional GaN Nanowires

We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10−8 mbar. Despite a...

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Bibliographic Details
Main Authors:	K. Jeganathan, V. Purushothaman, R. Debnath, S. Arumugam
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2014-05-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4878976

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