Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography
We performed Borrmann effect x-ray topography (XRT) to observe dislocations and other structural defects in a thick β-Ga2O3 (001) substrate. The Borrmann effect was realized by working in a symmetrical Laue geometry (g = 020). Anomalous transmission occurred under the exact Bragg condition, producin...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2022-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0088701 |
| _version_ | 1818467904323059712 |
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| author | Yongzhao Yao Keiichi Hirano Yoshihiro Sugawara Kohei Sasaki Akito Kuramata Yukari Ishikawa |
| author_facet | Yongzhao Yao Keiichi Hirano Yoshihiro Sugawara Kohei Sasaki Akito Kuramata Yukari Ishikawa |
| author_sort | Yongzhao Yao |
| collection | DOAJ |
| description | We performed Borrmann effect x-ray topography (XRT) to observe dislocations and other structural defects in a thick β-Ga2O3 (001) substrate. The Borrmann effect was realized by working in a symmetrical Laue geometry (g = 020). Anomalous transmission occurred under the exact Bragg condition, producing a strong diffraction beam that allowed us to image defects across the entire thickness of the substrate. The analysis clearly revealed straight b-axis screw-type and curved dislocations and allowed assessing the corresponding behaviors. Other structural defects, including pipe-shaped voids and dislocation loops produced by mechanical damage, were also observed. Finally, we compared Borrmann effect transmission topography and conventional reflection topography and explained the appearance of some characteristic defects in the two modes. Our results show that Borrmann effect XRT is a powerful and effective technique to study the spatial distribution and structural properties of defects in highly absorbing β-Ga2O3. |
| first_indexed | 2024-04-13T21:06:36Z |
| format | Article |
| id | doaj.art-5eda11048bee4dc2aa3a377a0de4fac8 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-13T21:06:36Z |
| publishDate | 2022-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-5eda11048bee4dc2aa3a377a0de4fac82022-12-22T02:29:58ZengAIP Publishing LLCAPL Materials2166-532X2022-05-01105051101051101-910.1063/5.0088701Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topographyYongzhao Yao0Keiichi Hirano1Yoshihiro Sugawara2Kohei Sasaki3Akito Kuramata4Yukari Ishikawa5Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, JapanHigh Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, JapanJapan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, JapanNovel Crystal Technology, Inc., Sayama 350-1328, JapanNovel Crystal Technology, Inc., Sayama 350-1328, JapanJapan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, JapanWe performed Borrmann effect x-ray topography (XRT) to observe dislocations and other structural defects in a thick β-Ga2O3 (001) substrate. The Borrmann effect was realized by working in a symmetrical Laue geometry (g = 020). Anomalous transmission occurred under the exact Bragg condition, producing a strong diffraction beam that allowed us to image defects across the entire thickness of the substrate. The analysis clearly revealed straight b-axis screw-type and curved dislocations and allowed assessing the corresponding behaviors. Other structural defects, including pipe-shaped voids and dislocation loops produced by mechanical damage, were also observed. Finally, we compared Borrmann effect transmission topography and conventional reflection topography and explained the appearance of some characteristic defects in the two modes. Our results show that Borrmann effect XRT is a powerful and effective technique to study the spatial distribution and structural properties of defects in highly absorbing β-Ga2O3.http://dx.doi.org/10.1063/5.0088701 |
| spellingShingle | Yongzhao Yao Keiichi Hirano Yoshihiro Sugawara Kohei Sasaki Akito Kuramata Yukari Ishikawa Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography APL Materials |
| title | Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography |
| title_full | Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography |
| title_fullStr | Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography |
| title_full_unstemmed | Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography |
| title_short | Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography |
| title_sort | observation of dislocations in thick β ga2o3 single crystal substrates using borrmann effect synchrotron x ray topography |
| url | http://dx.doi.org/10.1063/5.0088701 |
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