Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography
We performed Borrmann effect x-ray topography (XRT) to observe dislocations and other structural defects in a thick β-Ga2O3 (001) substrate. The Borrmann effect was realized by working in a symmetrical Laue geometry (g = 020). Anomalous transmission occurred under the exact Bragg condition, producin...
| Hlavní autoři: | , , , , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
AIP Publishing LLC
2022-05-01
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| Edice: | APL Materials |
| On-line přístup: | http://dx.doi.org/10.1063/5.0088701 |