Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography

Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography

We performed Borrmann effect x-ray topography (XRT) to observe dislocations and other structural defects in a thick β-Ga2O3 (001) substrate. The Borrmann effect was realized by working in a symmetrical Laue geometry (g = 020). Anomalous transmission occurred under the exact Bragg condition, producin...

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Bibliographic Details
Main Authors:	Yongzhao Yao, Keiichi Hirano, Yoshihiro Sugawara, Kohei Sasaki, Akito Kuramata, Yukari Ishikawa
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2022-05-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/5.0088701

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