First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructure

Recently, the experimentally fabricated van der Waals bilayer heterostructure of WSe2/SnS2 was found to possess excellent electronic and optoelectronic applications in p-n diode, photodetector and transistor (Yang et al., Nat. Commun., 2017, 8, 1906; Zhou et al., Adv. Mater., 2018, 30, 1703286). How...

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Main Authors: Cong Wang, Guoying Gao, Hezhu Shao, Ke Xu
Format: Article
Language:English
Published: Elsevier 2023-08-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379723003996
_version_ 1827877804837961728
author Cong Wang
Guoying Gao
Hezhu Shao
Ke Xu
author_facet Cong Wang
Guoying Gao
Hezhu Shao
Ke Xu
author_sort Cong Wang
collection DOAJ
description Recently, the experimentally fabricated van der Waals bilayer heterostructure of WSe2/SnS2 was found to possess excellent electronic and optoelectronic applications in p-n diode, photodetector and transistor (Yang et al., Nat. Commun., 2017, 8, 1906; Zhou et al., Adv. Mater., 2018, 30, 1703286). However, the thermoelectric properties have not been studied. Here, using the first-principles calculations and Boltzmann transport theory, we present a study on the thermoelectric transport properties for the WSe2/SnS2 bilayer heterostructure. The results show that the n-type power factor of WSe2/SnS2 bilayer heterostructure is greatly improved compared to that of WSe2 monolayer. The calculated phonon relaxation time and three-phonon scattering phase space indicate that the low-frequency optical branches overlapping with the acoustic modes in WSe2/SnS2 bilayer heterostructure provides more scattering channels, resulting in a lower lattice thermal conductivity, 22.69 W m−1 K−1 at room temperature, which is smaller than that of monolayer WSe2. The optimized n-type thermoelectric ZT value at 800 K for WSe2/SnS2 can reach 1.16, which indicate the bilayer heterostructure WSe2/SnS2 is predicted to be promising for thermoelectric applications.
first_indexed 2024-03-12T17:41:38Z
format Article
id doaj.art-5edf4009e8e34aceb8e15db42e448b86
institution Directory Open Access Journal
issn 2211-3797
language English
last_indexed 2024-03-12T17:41:38Z
publishDate 2023-08-01
publisher Elsevier
record_format Article
series Results in Physics
spelling doaj.art-5edf4009e8e34aceb8e15db42e448b862023-08-04T05:46:58ZengElsevierResults in Physics2211-37972023-08-0151106606First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructureCong Wang0Guoying Gao1Hezhu Shao2Ke Xu3Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei Longzhong Laboratory, Hubei University of Arts and Science, Xiangyang 441053, China; School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; Corresponding authors at: Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei Longzhong Laboratory, Hubei University of Arts and Science, Xiangyang 441053, PR China (C. Wang).School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; Corresponding authors at: Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei Longzhong Laboratory, Hubei University of Arts and Science, Xiangyang 441053, PR China (C. Wang).College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, ChinaHubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei Longzhong Laboratory, Hubei University of Arts and Science, Xiangyang 441053, ChinaRecently, the experimentally fabricated van der Waals bilayer heterostructure of WSe2/SnS2 was found to possess excellent electronic and optoelectronic applications in p-n diode, photodetector and transistor (Yang et al., Nat. Commun., 2017, 8, 1906; Zhou et al., Adv. Mater., 2018, 30, 1703286). However, the thermoelectric properties have not been studied. Here, using the first-principles calculations and Boltzmann transport theory, we present a study on the thermoelectric transport properties for the WSe2/SnS2 bilayer heterostructure. The results show that the n-type power factor of WSe2/SnS2 bilayer heterostructure is greatly improved compared to that of WSe2 monolayer. The calculated phonon relaxation time and three-phonon scattering phase space indicate that the low-frequency optical branches overlapping with the acoustic modes in WSe2/SnS2 bilayer heterostructure provides more scattering channels, resulting in a lower lattice thermal conductivity, 22.69 W m−1 K−1 at room temperature, which is smaller than that of monolayer WSe2. The optimized n-type thermoelectric ZT value at 800 K for WSe2/SnS2 can reach 1.16, which indicate the bilayer heterostructure WSe2/SnS2 is predicted to be promising for thermoelectric applications.http://www.sciencedirect.com/science/article/pii/S2211379723003996ThermoelectricFirst-principles calculationsWSe2/SnS2 heterostructure
spellingShingle Cong Wang
Guoying Gao
Hezhu Shao
Ke Xu
First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructure
Results in Physics
Thermoelectric
First-principles calculations
WSe2/SnS2 heterostructure
title First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructure
title_full First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructure
title_fullStr First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructure
title_full_unstemmed First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructure
title_short First-principles calculations of thermoelectric transport properties in WSe2/SnS2 bilayer heterostructure
title_sort first principles calculations of thermoelectric transport properties in wse2 sns2 bilayer heterostructure
topic Thermoelectric
First-principles calculations
WSe2/SnS2 heterostructure
url http://www.sciencedirect.com/science/article/pii/S2211379723003996
work_keys_str_mv AT congwang firstprinciplescalculationsofthermoelectrictransportpropertiesinwse2sns2bilayerheterostructure
AT guoyinggao firstprinciplescalculationsofthermoelectrictransportpropertiesinwse2sns2bilayerheterostructure
AT hezhushao firstprinciplescalculationsofthermoelectrictransportpropertiesinwse2sns2bilayerheterostructure
AT kexu firstprinciplescalculationsofthermoelectrictransportpropertiesinwse2sns2bilayerheterostructure