A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation
Analog synaptic weight modulation that is linear, symmetric, and exhibits long-term stability is demonstrated by the resistance changes in a Pt/indium-tin-oxide (ITO)/CeO2/Pt memristor. Distinct from a Pt/CeO2/Pt memristor without the ITO layer, which shows highly nonlinear and asymmetric resistance...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5097317 |
| _version_ | 1828889051125514240 |
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| author | Hyung Jun Kim Minju Kim Keonwon Beom Hyerin Lee Chi Jung Kang Tae-Sik Yoon |
| author_facet | Hyung Jun Kim Minju Kim Keonwon Beom Hyerin Lee Chi Jung Kang Tae-Sik Yoon |
| author_sort | Hyung Jun Kim |
| collection | DOAJ |
| description | Analog synaptic weight modulation that is linear, symmetric, and exhibits long-term stability is demonstrated by the resistance changes in a Pt/indium-tin-oxide (ITO)/CeO2/Pt memristor. Distinct from a Pt/CeO2/Pt memristor without the ITO layer, which shows highly nonlinear and asymmetric resistance changes, the Pt/ITO/CeO2/Pt memristor exhibits linear and symmetric resistance changes in proportion to the number of voltage applications with opposite polarities for potentiation and depression behaviors. The Pt/CeO2/Pt memristor also displays high long-term stability of modulated synaptic weight over time, which originates from the ITO layer acting as a reservoir of oxygen ions drifted from the CeO2 layer to retain the resistance change. Comparison of the results for the Pt/CeO2/Pt and Pt/ITO/CeO2/Pt memristors confirms the role of ITO in the linearity, symmetry, and long-term stability of the resistance change in CeO2-based memristors for use as artificial synapses in neuromorphic systems. |
| first_indexed | 2024-12-13T12:33:59Z |
| format | Article |
| id | doaj.art-5fa2f22954884d6695b80bbd6860892d |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-13T12:33:59Z |
| publishDate | 2019-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-5fa2f22954884d6695b80bbd6860892d2022-12-21T23:45:56ZengAIP Publishing LLCAPL Materials2166-532X2019-07-0177071113071113-710.1063/1.5097317016907APMA Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulationHyung Jun Kim0Minju Kim1Keonwon Beom2Hyerin Lee3Chi Jung Kang4Tae-Sik Yoon5Department of Materials Science and Engineering, Myongji University, Gyeonggi-do 17058, South KoreaDepartment of Materials Science and Engineering, Myongji University, Gyeonggi-do 17058, South KoreaDepartment of Materials Science and Engineering, Myongji University, Gyeonggi-do 17058, South KoreaDepartment of Materials Science and Engineering, Myongji University, Gyeonggi-do 17058, South KoreaDepartment of Physics, Myongji University, Gyeonggi-do 17058, South KoreaDepartment of Materials Science and Engineering, Myongji University, Gyeonggi-do 17058, South KoreaAnalog synaptic weight modulation that is linear, symmetric, and exhibits long-term stability is demonstrated by the resistance changes in a Pt/indium-tin-oxide (ITO)/CeO2/Pt memristor. Distinct from a Pt/CeO2/Pt memristor without the ITO layer, which shows highly nonlinear and asymmetric resistance changes, the Pt/ITO/CeO2/Pt memristor exhibits linear and symmetric resistance changes in proportion to the number of voltage applications with opposite polarities for potentiation and depression behaviors. The Pt/CeO2/Pt memristor also displays high long-term stability of modulated synaptic weight over time, which originates from the ITO layer acting as a reservoir of oxygen ions drifted from the CeO2 layer to retain the resistance change. Comparison of the results for the Pt/CeO2/Pt and Pt/ITO/CeO2/Pt memristors confirms the role of ITO in the linearity, symmetry, and long-term stability of the resistance change in CeO2-based memristors for use as artificial synapses in neuromorphic systems.http://dx.doi.org/10.1063/1.5097317 |
| spellingShingle | Hyung Jun Kim Minju Kim Keonwon Beom Hyerin Lee Chi Jung Kang Tae-Sik Yoon A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation APL Materials |
| title | A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation |
| title_full | A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation |
| title_fullStr | A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation |
| title_full_unstemmed | A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation |
| title_short | A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation |
| title_sort | pt ito ceo2 pt memristor with an analog linear symmetric and long term stable synaptic weight modulation |
| url | http://dx.doi.org/10.1063/1.5097317 |
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