Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)
<p>Abstract</p> <p>A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high cryst...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2010-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-010-9670-6 |
| _version_ | 1797705254724173824 |
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| author | Kukushkin SA Osipov AV Feoktistov NA Grudinkin SA Perova TS Wasyluk J |
| author_facet | Kukushkin SA Osipov AV Feoktistov NA Grudinkin SA Perova TS Wasyluk J |
| author_sort | Kukushkin SA |
| collection | DOAJ |
| description | <p>Abstract</p> <p>A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed.</p> |
| first_indexed | 2024-03-12T05:34:23Z |
| format | Article |
| id | doaj.art-5fb824d5d7064c4baa64a5a3c8d4a605 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T05:34:23Z |
| publishDate | 2010-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-5fb824d5d7064c4baa64a5a3c8d4a6052023-09-03T06:33:04ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-015915071511Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)Kukushkin SAOsipov AVFeoktistov NAGrudinkin SAPerova TSWasyluk J<p>Abstract</p> <p>A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed.</p>http://dx.doi.org/10.1007/s11671-010-9670-63C-SiCVoids in SiCMicro-Raman spectroscopyMicro-Raman mapping |
| spellingShingle | Kukushkin SA Osipov AV Feoktistov NA Grudinkin SA Perova TS Wasyluk J Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111) Nanoscale Research Letters 3C-SiC Voids in SiC Micro-Raman spectroscopy Micro-Raman mapping |
| title | Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111) |
| title_full | Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111) |
| title_fullStr | Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111) |
| title_full_unstemmed | Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111) |
| title_short | Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111) |
| title_sort | micro raman mapping of 3c sic thin films grown by solid 8211 gas phase epitaxy on si 111 |
| topic | 3C-SiC Voids in SiC Micro-Raman spectroscopy Micro-Raman mapping |
| url | http://dx.doi.org/10.1007/s11671-010-9670-6 |
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