Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method
Directionally solidified multicrystalline silicon (mc-Si)-based solar cells have dominated the global photovoltaic market in recent years. The photovoltaic performance of mc-Si solar cells is strongly influenced by their crystalline defects. The occurrence of minicrystallization results in much smal...
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| Format: | Article |
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MDPI AG
2016-10-01
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| Series: | Crystals |
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| Online Access: | http://www.mdpi.com/2073-4352/6/10/130 |
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| author | Nan Chen Shenyu Qiu Jianhua Huang Guoping Du Guihua Liu |
| author_facet | Nan Chen Shenyu Qiu Jianhua Huang Guoping Du Guihua Liu |
| author_sort | Nan Chen |
| collection | DOAJ |
| description | Directionally solidified multicrystalline silicon (mc-Si)-based solar cells have dominated the global photovoltaic market in recent years. The photovoltaic performance of mc-Si solar cells is strongly influenced by their crystalline defects. The occurrence of minicrystallization results in much smaller grain size and, therefore, a larger number of grain boundaries in mc-Si ingots. Dislocations in the minicrystallized regions have been rarely investigated in the literature. In this work, optical microscopy was used to investigate dislocations in the mincrystallized regions in mc-Si ingots grown by the directional solidification method. The distribution of dislocations was found to be highly inhomogeneous from one grain to another in the mincrystallized regions. High inhomogeneity of dislocation distribution was also observed in individual grains. Serious shunting behavior was observed in the mc-Si solar cells containing minicrystallized regions, which strongly deteriorates their photovoltaic properties. The shunting was found to be highly localized to the minicrystallized regions. |
| first_indexed | 2024-04-11T22:04:08Z |
| format | Article |
| id | doaj.art-5fde9de62745476ab302e38d67362d93 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-11T22:04:08Z |
| publishDate | 2016-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-5fde9de62745476ab302e38d67362d932022-12-22T04:00:46ZengMDPI AGCrystals2073-43522016-10-0161013010.3390/cryst6100130cryst6100130Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification MethodNan Chen0Shenyu Qiu1Jianhua Huang2Guoping Du3Guihua Liu4School of Materials Science and Engineering, Nanchang University, Nanchang 330031, ChinaDepartment of Science, Nanchang Institute of Technology, Nanchang 330099, ChinaSchool of Materials Science and Engineering, Nanchang University, Nanchang 330031, ChinaSchool of Materials Science and Engineering, Nanchang University, Nanchang 330031, ChinaSchool of Materials Science and Engineering, Nanchang University, Nanchang 330031, ChinaDirectionally solidified multicrystalline silicon (mc-Si)-based solar cells have dominated the global photovoltaic market in recent years. The photovoltaic performance of mc-Si solar cells is strongly influenced by their crystalline defects. The occurrence of minicrystallization results in much smaller grain size and, therefore, a larger number of grain boundaries in mc-Si ingots. Dislocations in the minicrystallized regions have been rarely investigated in the literature. In this work, optical microscopy was used to investigate dislocations in the mincrystallized regions in mc-Si ingots grown by the directional solidification method. The distribution of dislocations was found to be highly inhomogeneous from one grain to another in the mincrystallized regions. High inhomogeneity of dislocation distribution was also observed in individual grains. Serious shunting behavior was observed in the mc-Si solar cells containing minicrystallized regions, which strongly deteriorates their photovoltaic properties. The shunting was found to be highly localized to the minicrystallized regions.http://www.mdpi.com/2073-4352/6/10/130crystal dislocationmulticrystalline silicondirectional solidificationminicrystallizationsolar cell |
| spellingShingle | Nan Chen Shenyu Qiu Jianhua Huang Guoping Du Guihua Liu Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method Crystals crystal dislocation multicrystalline silicon directional solidification minicrystallization solar cell |
| title | Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method |
| title_full | Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method |
| title_fullStr | Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method |
| title_full_unstemmed | Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method |
| title_short | Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method |
| title_sort | study of dislocations in the minicrystallized regions in multicrystalline silicon grown by the directional solidification method |
| topic | crystal dislocation multicrystalline silicon directional solidification minicrystallization solar cell |
| url | http://www.mdpi.com/2073-4352/6/10/130 |
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