Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO<sub>2</sub> Nanosphere Mask Lithography with the Dip-Coating Method

Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO<sub>2</sub> Nanosphere Mask Lithography with the Dip-Coating Method

In this paper, the conditions of the dip-coating method of SiO<sub>2</sub> nanospheres are optimized, and a neatly arranged single-layer SiO<sub>2</sub> array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN layer t...

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Dades bibliogràfiques
Autors principals: Wenkai Yue, Peixian Li, Xiaowei Zhou, Yanli Wang, Jinxing Wu, Junchun Bai
Format: Article
Idioma:English
Publicat: MDPI AG 2021-08-01
Col·lecció:Nanomaterials
Matèries:
dipping-pulling method
wide bandgap semiconductor
gallium nitride
SiO<sub>2</sub> nanosphere
near-ultraviolet LED
Accés en línia:https://www.mdpi.com/2079-4991/11/8/2009

Internet

https://www.mdpi.com/2079-4991/11/8/2009

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