A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials
The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional ma...
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MDPI AG
2021-09-01
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author | Fedor Pavlovich Meshchaninov Dmitry Alexeevich Zhevnenko Vladislav Sergeevich Kozhevnikov Evgeniy Sergeevich Shamin Oleg Alexandrovich Telminov Evgeniy Sergeevich Gornev |
author_facet | Fedor Pavlovich Meshchaninov Dmitry Alexeevich Zhevnenko Vladislav Sergeevich Kozhevnikov Evgeniy Sergeevich Shamin Oleg Alexandrovich Telminov Evgeniy Sergeevich Gornev |
author_sort | Fedor Pavlovich Meshchaninov |
collection | DOAJ |
description | The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional materials remains open. In this paper, a comparative analysis of linear and nonlinear drift as well as threshold models was conducted. For this purpose, the assumption of the relationship between the results of the optimization of the volt–ampere characteristic loop and the descriptive ability of the model was used. A global random search algorithm was used to solve the optimization problem, and an error function with the inclusion of a regularizer was developed to estimate the loop features. Based on the characteristic features derived through meta-analysis, synthetic volt–ampere characteristic contours were built and the results of their approximation by different models were compared. For every model, the quality of the threshold voltage estimation was evaluated, the forms of the memristor potential functions and dynamic attractors associated with experimental contours on graphene oxide were calculated. |
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institution | Directory Open Access Journal |
issn | 2072-666X |
language | English |
last_indexed | 2024-03-10T06:22:58Z |
publishDate | 2021-09-01 |
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series | Micromachines |
spelling | doaj.art-602a9b28c9ff408199ca7ffcf5ce9fc32023-11-22T19:11:25ZengMDPI AGMicromachines2072-666X2021-09-011210120110.3390/mi12101201A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional MaterialsFedor Pavlovich Meshchaninov0Dmitry Alexeevich Zhevnenko1Vladislav Sergeevich Kozhevnikov2Evgeniy Sergeevich Shamin3Oleg Alexandrovich Telminov4Evgeniy Sergeevich Gornev5Moscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaThe use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional materials remains open. In this paper, a comparative analysis of linear and nonlinear drift as well as threshold models was conducted. For this purpose, the assumption of the relationship between the results of the optimization of the volt–ampere characteristic loop and the descriptive ability of the model was used. A global random search algorithm was used to solve the optimization problem, and an error function with the inclusion of a regularizer was developed to estimate the loop features. Based on the characteristic features derived through meta-analysis, synthetic volt–ampere characteristic contours were built and the results of their approximation by different models were compared. For every model, the quality of the threshold voltage estimation was evaluated, the forms of the memristor potential functions and dynamic attractors associated with experimental contours on graphene oxide were calculated.https://www.mdpi.com/2072-666X/12/10/1201memristorlow-dimensionalcompact modelingvolt–ampere characteristicdynamic attractorsoptimization |
spellingShingle | Fedor Pavlovich Meshchaninov Dmitry Alexeevich Zhevnenko Vladislav Sergeevich Kozhevnikov Evgeniy Sergeevich Shamin Oleg Alexandrovich Telminov Evgeniy Sergeevich Gornev A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials Micromachines memristor low-dimensional compact modeling volt–ampere characteristic dynamic attractors optimization |
title | A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials |
title_full | A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials |
title_fullStr | A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials |
title_full_unstemmed | A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials |
title_short | A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials |
title_sort | study of the applicability of existing compact models to the simulation of memristive structures characteristics on low dimensional materials |
topic | memristor low-dimensional compact modeling volt–ampere characteristic dynamic attractors optimization |
url | https://www.mdpi.com/2072-666X/12/10/1201 |
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