A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials

The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional ma...

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Main Authors: Fedor Pavlovich Meshchaninov, Dmitry Alexeevich Zhevnenko, Vladislav Sergeevich Kozhevnikov, Evgeniy Sergeevich Shamin, Oleg Alexandrovich Telminov, Evgeniy Sergeevich Gornev
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/12/10/1201
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author Fedor Pavlovich Meshchaninov
Dmitry Alexeevich Zhevnenko
Vladislav Sergeevich Kozhevnikov
Evgeniy Sergeevich Shamin
Oleg Alexandrovich Telminov
Evgeniy Sergeevich Gornev
author_facet Fedor Pavlovich Meshchaninov
Dmitry Alexeevich Zhevnenko
Vladislav Sergeevich Kozhevnikov
Evgeniy Sergeevich Shamin
Oleg Alexandrovich Telminov
Evgeniy Sergeevich Gornev
author_sort Fedor Pavlovich Meshchaninov
collection DOAJ
description The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional materials remains open. In this paper, a comparative analysis of linear and nonlinear drift as well as threshold models was conducted. For this purpose, the assumption of the relationship between the results of the optimization of the volt–ampere characteristic loop and the descriptive ability of the model was used. A global random search algorithm was used to solve the optimization problem, and an error function with the inclusion of a regularizer was developed to estimate the loop features. Based on the characteristic features derived through meta-analysis, synthetic volt–ampere characteristic contours were built and the results of their approximation by different models were compared. For every model, the quality of the threshold voltage estimation was evaluated, the forms of the memristor potential functions and dynamic attractors associated with experimental contours on graphene oxide were calculated.
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spelling doaj.art-602a9b28c9ff408199ca7ffcf5ce9fc32023-11-22T19:11:25ZengMDPI AGMicromachines2072-666X2021-09-011210120110.3390/mi12101201A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional MaterialsFedor Pavlovich Meshchaninov0Dmitry Alexeevich Zhevnenko1Vladislav Sergeevich Kozhevnikov2Evgeniy Sergeevich Shamin3Oleg Alexandrovich Telminov4Evgeniy Sergeevich Gornev5Moscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaMoscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, RussiaThe use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional materials remains open. In this paper, a comparative analysis of linear and nonlinear drift as well as threshold models was conducted. For this purpose, the assumption of the relationship between the results of the optimization of the volt–ampere characteristic loop and the descriptive ability of the model was used. A global random search algorithm was used to solve the optimization problem, and an error function with the inclusion of a regularizer was developed to estimate the loop features. Based on the characteristic features derived through meta-analysis, synthetic volt–ampere characteristic contours were built and the results of their approximation by different models were compared. For every model, the quality of the threshold voltage estimation was evaluated, the forms of the memristor potential functions and dynamic attractors associated with experimental contours on graphene oxide were calculated.https://www.mdpi.com/2072-666X/12/10/1201memristorlow-dimensionalcompact modelingvolt–ampere characteristicdynamic attractorsoptimization
spellingShingle Fedor Pavlovich Meshchaninov
Dmitry Alexeevich Zhevnenko
Vladislav Sergeevich Kozhevnikov
Evgeniy Sergeevich Shamin
Oleg Alexandrovich Telminov
Evgeniy Sergeevich Gornev
A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials
Micromachines
memristor
low-dimensional
compact modeling
volt–ampere characteristic
dynamic attractors
optimization
title A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials
title_full A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials
title_fullStr A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials
title_full_unstemmed A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials
title_short A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials
title_sort study of the applicability of existing compact models to the simulation of memristive structures characteristics on low dimensional materials
topic memristor
low-dimensional
compact modeling
volt–ampere characteristic
dynamic attractors
optimization
url https://www.mdpi.com/2072-666X/12/10/1201
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