Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories
We investigate the ultrafast response of crystalline Ge2Sb2Te5 nanoparticles (NPs) below the phase transformation threshold fluence. The observed rapid change of the optical response and the presence of coherent optical phonons are consistent with the relaxation dynamics in bulk Ge2Sb2Te5 films and,...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0156207 |
| _version_ | 1797755878792757248 |
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| author | Antonio Caretta Barbara Casarin Bin Chen Bart J. Kooi Marco Malvestuto |
| author_facet | Antonio Caretta Barbara Casarin Bin Chen Bart J. Kooi Marco Malvestuto |
| author_sort | Antonio Caretta |
| collection | DOAJ |
| description | We investigate the ultrafast response of crystalline Ge2Sb2Te5 nanoparticles (NPs) below the phase transformation threshold fluence. The observed rapid change of the optical response and the presence of coherent optical phonons are consistent with the relaxation dynamics in bulk Ge2Sb2Te5 films and, more importantly, occur within the same ultrafast timescales. We conclude that the benefit of the lower energy consumption of memories based on Ge-Sb-Te (GST) NPs aggregates, demonstrated by Casarin et al. (2018), occurs with no disadvantage, as the read/write speed can be as fast as in bulk GSTs. |
| first_indexed | 2024-03-12T17:53:30Z |
| format | Article |
| id | doaj.art-604db9a6225a42b7bc97b2245b7863a5 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-03-12T17:53:30Z |
| publishDate | 2023-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-604db9a6225a42b7bc97b2245b7863a52023-08-02T20:20:12ZengAIP Publishing LLCAPL Materials2166-532X2023-07-01117071117071117-510.1063/5.0156207Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memoriesAntonio Caretta0Barbara Casarin1Bin Chen2Bart J. Kooi3Marco Malvestuto4Elettra-Sincrotrone Trieste S.C.p.A. Strada Statale 14 - km 163.5 in AREA Science Park 34149 Basovizza, Trieste, ItalyDepartment of Physics, University of Trieste, Via A. Valerio 2, 34127 Trieste, ItalyZernike Institute for Advanced Materials University of Groningen, 9747 AG Groningen, The NetherlandsZernike Institute for Advanced Materials University of Groningen, 9747 AG Groningen, The NetherlandsElettra-Sincrotrone Trieste S.C.p.A. Strada Statale 14 - km 163.5 in AREA Science Park 34149 Basovizza, Trieste, ItalyWe investigate the ultrafast response of crystalline Ge2Sb2Te5 nanoparticles (NPs) below the phase transformation threshold fluence. The observed rapid change of the optical response and the presence of coherent optical phonons are consistent with the relaxation dynamics in bulk Ge2Sb2Te5 films and, more importantly, occur within the same ultrafast timescales. We conclude that the benefit of the lower energy consumption of memories based on Ge-Sb-Te (GST) NPs aggregates, demonstrated by Casarin et al. (2018), occurs with no disadvantage, as the read/write speed can be as fast as in bulk GSTs.http://dx.doi.org/10.1063/5.0156207 |
| spellingShingle | Antonio Caretta Barbara Casarin Bin Chen Bart J. Kooi Marco Malvestuto Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories APL Materials |
| title | Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories |
| title_full | Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories |
| title_fullStr | Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories |
| title_full_unstemmed | Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories |
| title_short | Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories |
| title_sort | ultrafast response of ge2sb2te5 nanoparticles the benefits of low energy amorphization switching with the same read write speed of bulk memories |
| url | http://dx.doi.org/10.1063/5.0156207 |
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