High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector

High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector

Abstract The InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical quantum efficiency (QE). Forcing the active region to be p...

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Bibliographic Details
Main Authors: Ju Sun, Nong Li, Qing-Xuan Jia, Xuan Zhang, Dong-Wei Jiang, Guo-Wei Wang, Zhi-Chuan Niu
Format: Article
Language:English
Published: SpringerOpen 2021-05-01
Series:Nanoscale Research Letters
Subjects:
π region doping
Gating
Anodic sulphide
Saturation bias voltage
Online Access:https://doi.org/10.1186/s11671-021-03550-x

Internet

https://doi.org/10.1186/s11671-021-03550-x

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