Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence

Eu3+ doped ZnWO4 phosphors were synthesized via the co-precipitation technique followed by subsequent thermal annealing in the range of 400–1000 °C. The phase, morphology, elemental composition, chemical states, optical absorption, and photoluminescence (PL) of the phosphors were c...

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Main Authors: Bao-gai Zhai, Long Yang, Yuan Ming Huang
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Nanomaterials
Subjects:
Online Access:http://www.mdpi.com/2079-4991/9/1/99
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author Bao-gai Zhai
Long Yang
Yuan Ming Huang
author_facet Bao-gai Zhai
Long Yang
Yuan Ming Huang
author_sort Bao-gai Zhai
collection DOAJ
description Eu3+ doped ZnWO4 phosphors were synthesized via the co-precipitation technique followed by subsequent thermal annealing in the range of 400–1000 °C. The phase, morphology, elemental composition, chemical states, optical absorption, and photoluminescence (PL) of the phosphors were characterized by X-ray diffraction, scanning electron microscopy, dispersive X-ray spectroscopy, X-ray photoelectron spectrometry, diffuse UV–vis reflectance spectroscopy, PL spectrophotometry, and PL lifetime spectroscopy, respectively. It is found that the PL from Eu3+ doped ZnWO4 is tunable through the control of the annealing temperature. Density functional calculations and optical absorption confirm that thermal annealing created intrinsic defects in ZnWO4 lattices play a pivotal role in the color tunable emissions of the Eu3+ doped ZnWO4 phosphors. These data have demonstrated that intrinsic defect engineering in ZnWO4 lattice is an alternative and effective strategy for tuning the emission color of Eu3+ doped ZnWO4. This work shows how to harness the intrinsic defects in ZnWO4 for the preparation of color tunable light-emitting phosphors.
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spelling doaj.art-608e87d9f2a447ebb4a3ba6057cf6a442022-12-22T01:53:42ZengMDPI AGNanomaterials2079-49912019-01-01919910.3390/nano9010099nano9010099Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable PhotoluminescenceBao-gai Zhai0Long Yang1Yuan Ming Huang2School of Mathematics and Physics, Changzhou University, Changzhou 213164, Jiangsu, ChinaSchool of Mathematics and Physics, Changzhou University, Changzhou 213164, Jiangsu, ChinaSchool of Mathematics and Physics, Changzhou University, Changzhou 213164, Jiangsu, ChinaEu3+ doped ZnWO4 phosphors were synthesized via the co-precipitation technique followed by subsequent thermal annealing in the range of 400–1000 °C. The phase, morphology, elemental composition, chemical states, optical absorption, and photoluminescence (PL) of the phosphors were characterized by X-ray diffraction, scanning electron microscopy, dispersive X-ray spectroscopy, X-ray photoelectron spectrometry, diffuse UV–vis reflectance spectroscopy, PL spectrophotometry, and PL lifetime spectroscopy, respectively. It is found that the PL from Eu3+ doped ZnWO4 is tunable through the control of the annealing temperature. Density functional calculations and optical absorption confirm that thermal annealing created intrinsic defects in ZnWO4 lattices play a pivotal role in the color tunable emissions of the Eu3+ doped ZnWO4 phosphors. These data have demonstrated that intrinsic defect engineering in ZnWO4 lattice is an alternative and effective strategy for tuning the emission color of Eu3+ doped ZnWO4. This work shows how to harness the intrinsic defects in ZnWO4 for the preparation of color tunable light-emitting phosphors.http://www.mdpi.com/2079-4991/9/1/99ZnWO4defect engineeringphotoluminescencedensity functional calculation
spellingShingle Bao-gai Zhai
Long Yang
Yuan Ming Huang
Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence
Nanomaterials
ZnWO4
defect engineering
photoluminescence
density functional calculation
title Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence
title_full Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence
title_fullStr Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence
title_full_unstemmed Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence
title_short Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence
title_sort intrinsic defect engineering in eu3 doped znwo4 for annealing temperature tunable photoluminescence
topic ZnWO4
defect engineering
photoluminescence
density functional calculation
url http://www.mdpi.com/2079-4991/9/1/99
work_keys_str_mv AT baogaizhai intrinsicdefectengineeringineu3dopedznwo4forannealingtemperaturetunablephotoluminescence
AT longyang intrinsicdefectengineeringineu3dopedznwo4forannealingtemperaturetunablephotoluminescence
AT yuanminghuang intrinsicdefectengineeringineu3dopedznwo4forannealingtemperaturetunablephotoluminescence