Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence
Eu3+ doped ZnWO4 phosphors were synthesized via the co-precipitation technique followed by subsequent thermal annealing in the range of 400–1000 °C. The phase, morphology, elemental composition, chemical states, optical absorption, and photoluminescence (PL) of the phosphors were c...
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MDPI AG
2019-01-01
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Online Access: | http://www.mdpi.com/2079-4991/9/1/99 |
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author | Bao-gai Zhai Long Yang Yuan Ming Huang |
author_facet | Bao-gai Zhai Long Yang Yuan Ming Huang |
author_sort | Bao-gai Zhai |
collection | DOAJ |
description | Eu3+ doped ZnWO4 phosphors were synthesized via the co-precipitation technique followed by subsequent thermal annealing in the range of 400–1000 °C. The phase, morphology, elemental composition, chemical states, optical absorption, and photoluminescence (PL) of the phosphors were characterized by X-ray diffraction, scanning electron microscopy, dispersive X-ray spectroscopy, X-ray photoelectron spectrometry, diffuse UV–vis reflectance spectroscopy, PL spectrophotometry, and PL lifetime spectroscopy, respectively. It is found that the PL from Eu3+ doped ZnWO4 is tunable through the control of the annealing temperature. Density functional calculations and optical absorption confirm that thermal annealing created intrinsic defects in ZnWO4 lattices play a pivotal role in the color tunable emissions of the Eu3+ doped ZnWO4 phosphors. These data have demonstrated that intrinsic defect engineering in ZnWO4 lattice is an alternative and effective strategy for tuning the emission color of Eu3+ doped ZnWO4. This work shows how to harness the intrinsic defects in ZnWO4 for the preparation of color tunable light-emitting phosphors. |
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issn | 2079-4991 |
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spelling | doaj.art-608e87d9f2a447ebb4a3ba6057cf6a442022-12-22T01:53:42ZengMDPI AGNanomaterials2079-49912019-01-01919910.3390/nano9010099nano9010099Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable PhotoluminescenceBao-gai Zhai0Long Yang1Yuan Ming Huang2School of Mathematics and Physics, Changzhou University, Changzhou 213164, Jiangsu, ChinaSchool of Mathematics and Physics, Changzhou University, Changzhou 213164, Jiangsu, ChinaSchool of Mathematics and Physics, Changzhou University, Changzhou 213164, Jiangsu, ChinaEu3+ doped ZnWO4 phosphors were synthesized via the co-precipitation technique followed by subsequent thermal annealing in the range of 400–1000 °C. The phase, morphology, elemental composition, chemical states, optical absorption, and photoluminescence (PL) of the phosphors were characterized by X-ray diffraction, scanning electron microscopy, dispersive X-ray spectroscopy, X-ray photoelectron spectrometry, diffuse UV–vis reflectance spectroscopy, PL spectrophotometry, and PL lifetime spectroscopy, respectively. It is found that the PL from Eu3+ doped ZnWO4 is tunable through the control of the annealing temperature. Density functional calculations and optical absorption confirm that thermal annealing created intrinsic defects in ZnWO4 lattices play a pivotal role in the color tunable emissions of the Eu3+ doped ZnWO4 phosphors. These data have demonstrated that intrinsic defect engineering in ZnWO4 lattice is an alternative and effective strategy for tuning the emission color of Eu3+ doped ZnWO4. This work shows how to harness the intrinsic defects in ZnWO4 for the preparation of color tunable light-emitting phosphors.http://www.mdpi.com/2079-4991/9/1/99ZnWO4defect engineeringphotoluminescencedensity functional calculation |
spellingShingle | Bao-gai Zhai Long Yang Yuan Ming Huang Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence Nanomaterials ZnWO4 defect engineering photoluminescence density functional calculation |
title | Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence |
title_full | Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence |
title_fullStr | Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence |
title_full_unstemmed | Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence |
title_short | Intrinsic Defect Engineering in Eu3+ Doped ZnWO4 for Annealing Temperature Tunable Photoluminescence |
title_sort | intrinsic defect engineering in eu3 doped znwo4 for annealing temperature tunable photoluminescence |
topic | ZnWO4 defect engineering photoluminescence density functional calculation |
url | http://www.mdpi.com/2079-4991/9/1/99 |
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