Magnetoresistive-coupled transistor using the Weyl semimetal NbP
Abstract Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices—attenuation of the electric fie...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-44961-5 |
| _version_ | 1797276470174810112 |
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| author | Lorenzo Rocchino Federico Balduini Heinz Schmid Alan Molinari Mathieu Luisier Vicky Süß Claudia Felser Bernd Gotsmann Cezar B. Zota |
| author_facet | Lorenzo Rocchino Federico Balduini Heinz Schmid Alan Molinari Mathieu Luisier Vicky Süß Claudia Felser Bernd Gotsmann Cezar B. Zota |
| author_sort | Lorenzo Rocchino |
| collection | DOAJ |
| description | Abstract Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices—attenuation of the electric field, and limited mobility and charge carrier density in semiconductor channels. In this work, we demonstrate a new type of transistor that operates through a different mechanism. The channel material is a Weyl semimetal, NbP, whose resistivity is modulated via a magnetic field generated by an integrated superconductor. Due to the exceptionally large electron mobility of this material, which reaches over 1,000,000 cm2/Vs, and the strong magnetoresistive coupling, the transistor can generate significant transconductance amplification at nanowatt levels of power. This type of device can enable new low-power amplifiers, suitable for qubit readout operation in quantum computers. |
| first_indexed | 2024-03-07T15:28:39Z |
| format | Article |
| id | doaj.art-60bb85e6ade24d93a1bff852c9b626c8 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-03-07T15:28:39Z |
| publishDate | 2024-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-60bb85e6ade24d93a1bff852c9b626c82024-03-05T16:34:42ZengNature PortfolioNature Communications2041-17232024-01-011511810.1038/s41467-024-44961-5Magnetoresistive-coupled transistor using the Weyl semimetal NbPLorenzo Rocchino0Federico Balduini1Heinz Schmid2Alan Molinari3Mathieu Luisier4Vicky Süß5Claudia Felser6Bernd Gotsmann7Cezar B. Zota8IBM Research Europe—ZürichIBM Research Europe—ZürichIBM Research Europe—ZürichIBM Research Europe—ZürichETH ZurichMax Planck Institute for Chemical Physics of SolidsMax Planck Institute for Chemical Physics of SolidsIBM Research Europe—ZürichIBM Research Europe—ZürichAbstract Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices—attenuation of the electric field, and limited mobility and charge carrier density in semiconductor channels. In this work, we demonstrate a new type of transistor that operates through a different mechanism. The channel material is a Weyl semimetal, NbP, whose resistivity is modulated via a magnetic field generated by an integrated superconductor. Due to the exceptionally large electron mobility of this material, which reaches over 1,000,000 cm2/Vs, and the strong magnetoresistive coupling, the transistor can generate significant transconductance amplification at nanowatt levels of power. This type of device can enable new low-power amplifiers, suitable for qubit readout operation in quantum computers.https://doi.org/10.1038/s41467-024-44961-5 |
| spellingShingle | Lorenzo Rocchino Federico Balduini Heinz Schmid Alan Molinari Mathieu Luisier Vicky Süß Claudia Felser Bernd Gotsmann Cezar B. Zota Magnetoresistive-coupled transistor using the Weyl semimetal NbP Nature Communications |
| title | Magnetoresistive-coupled transistor using the Weyl semimetal NbP |
| title_full | Magnetoresistive-coupled transistor using the Weyl semimetal NbP |
| title_fullStr | Magnetoresistive-coupled transistor using the Weyl semimetal NbP |
| title_full_unstemmed | Magnetoresistive-coupled transistor using the Weyl semimetal NbP |
| title_short | Magnetoresistive-coupled transistor using the Weyl semimetal NbP |
| title_sort | magnetoresistive coupled transistor using the weyl semimetal nbp |
| url | https://doi.org/10.1038/s41467-024-44961-5 |
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