Growth of strontium ruthenate films by hybrid molecular beam epitaxy

We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses el...

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Main Authors: Patrick B. Marshall, Honggyu Kim, Kaveh Ahadi, Susanne Stemmer
Format: Article
Language:English
Published: AIP Publishing LLC 2017-09-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4998772
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author Patrick B. Marshall
Honggyu Kim
Kaveh Ahadi
Susanne Stemmer
author_facet Patrick B. Marshall
Honggyu Kim
Kaveh Ahadi
Susanne Stemmer
author_sort Patrick B. Marshall
collection DOAJ
description We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.
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spelling doaj.art-60feb270b1874931b631da0ca3034ec12022-12-22T02:53:46ZengAIP Publishing LLCAPL Materials2166-532X2017-09-0159096101096101-610.1063/1.4998772002709APMGrowth of strontium ruthenate films by hybrid molecular beam epitaxyPatrick B. Marshall0Honggyu Kim1Kaveh Ahadi2Susanne Stemmer3Materials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAWe report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.http://dx.doi.org/10.1063/1.4998772
spellingShingle Patrick B. Marshall
Honggyu Kim
Kaveh Ahadi
Susanne Stemmer
Growth of strontium ruthenate films by hybrid molecular beam epitaxy
APL Materials
title Growth of strontium ruthenate films by hybrid molecular beam epitaxy
title_full Growth of strontium ruthenate films by hybrid molecular beam epitaxy
title_fullStr Growth of strontium ruthenate films by hybrid molecular beam epitaxy
title_full_unstemmed Growth of strontium ruthenate films by hybrid molecular beam epitaxy
title_short Growth of strontium ruthenate films by hybrid molecular beam epitaxy
title_sort growth of strontium ruthenate films by hybrid molecular beam epitaxy
url http://dx.doi.org/10.1063/1.4998772
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AT susannestemmer growthofstrontiumruthenatefilmsbyhybridmolecularbeamepitaxy