Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal
Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect paramete...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-04-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/11/5/460 |
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| author | Andrejs Sabanskis Matīss Plāte Andreas Sattler Alfred Miller Jānis Virbulis |
| author_facet | Andrejs Sabanskis Matīss Plāte Andreas Sattler Alfred Miller Jānis Virbulis |
| author_sort | Andrejs Sabanskis |
| collection | DOAJ |
| description | Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for standard and adjusted parameter sets and generally the best agreement in the whole crystal is found for models considering the effect of thermal stress on the equilibrium point defect concentration. |
| first_indexed | 2024-03-10T12:07:35Z |
| format | Article |
| id | doaj.art-6106a47c54244839a63fb3e0026673ea |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T12:07:35Z |
| publishDate | 2021-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-6106a47c54244839a63fb3e0026673ea2023-11-21T16:29:06ZengMDPI AGCrystals2073-43522021-04-0111546010.3390/cryst11050460Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon CrystalAndrejs Sabanskis0Matīss Plāte1Andreas Sattler2Alfred Miller3Jānis Virbulis4Institute of Numerical Modelling, University of Latvia, Jelgavas Street 3, LV-1004 Riga, LatviaSiltronic AG, Einsteinstraße 172-Tower B/Blue Tower, 81677 München, GermanySiltronic AG, Einsteinstraße 172-Tower B/Blue Tower, 81677 München, GermanySiltronic AG, Einsteinstraße 172-Tower B/Blue Tower, 81677 München, GermanyInstitute of Numerical Modelling, University of Latvia, Jelgavas Street 3, LV-1004 Riga, LatviaPrediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for standard and adjusted parameter sets and generally the best agreement in the whole crystal is found for models considering the effect of thermal stress on the equilibrium point defect concentration.https://www.mdpi.com/2073-4352/11/5/460Czochralskisiliconcomputer simulationpoint defectsthermal stressheat transfer |
| spellingShingle | Andrejs Sabanskis Matīss Plāte Andreas Sattler Alfred Miller Jānis Virbulis Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal Crystals Czochralski silicon computer simulation point defects thermal stress heat transfer |
| title | Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal |
| title_full | Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal |
| title_fullStr | Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal |
| title_full_unstemmed | Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal |
| title_short | Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal |
| title_sort | evaluation of the performance of published point defect parameter sets in cone and body phase of a 300 mm czochralski silicon crystal |
| topic | Czochralski silicon computer simulation point defects thermal stress heat transfer |
| url | https://www.mdpi.com/2073-4352/11/5/460 |
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