Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect paramete...

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Bibliographic Details
Main Authors: Andrejs Sabanskis, Matīss Plāte, Andreas Sattler, Alfred Miller, Jānis Virbulis
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Crystals
Subjects:
Czochralski
silicon
computer simulation
point defects
thermal stress
heat transfer
Online Access:https://www.mdpi.com/2073-4352/11/5/460

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