Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography
In combination with tapered-trench-etching of Si and SU-8 photoresist, a grayscale mask for deep X-ray lithography was fabricated and passed a 10-times-exposure test. The performance of the X-ray grayscale mask was evaluated using the TERAS synchrotron radiation facility at the National Institute of...
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| Format: | Article |
| Language: | English |
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MDPI AG
2015-02-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/6/2/252 |
| _version_ | 1818990712217141248 |
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| author | Harutaka Mekaru |
| author_facet | Harutaka Mekaru |
| author_sort | Harutaka Mekaru |
| collection | DOAJ |
| description | In combination with tapered-trench-etching of Si and SU-8 photoresist, a grayscale mask for deep X-ray lithography was fabricated and passed a 10-times-exposure test. The performance of the X-ray grayscale mask was evaluated using the TERAS synchrotron radiation facility at the National Institute of Advanced Industrial Science and Technology (AIST). Although the SU-8 before photo-curing has been evaluated as a negative-tone photoresist for ultraviolet (UV) and X-ray lithographies, the characteristic of the SU-8 after photo-curing has not been investigated. A polymethyl methacrylate (PMMA) sheet was irradiated by a synchrotron radiation through an X-ray mask, and relationships between the dose energy and exposure depth, and between the dose energy and dimensional transition, were investigated. Using such a technique, the shape of a 26-μm-high Si absorber was transformed into the shape of a PMMA microneedle with a height of 76 μm, and done with a high contrast. Although during the fabrication process of the X-ray mask a 100-μm-pattern-pitch (by design) was enlarged to 120 μm. However, with an increase in an integrated dose energy this number decreased to 99 μm. These results show that the X-ray grayscale mask has many practical applications. In this paper, the author reports on the evaluation results of SU-8 when used as a membrane material for an X-ray mask. |
| first_indexed | 2024-12-20T19:58:44Z |
| format | Article |
| id | doaj.art-615dbb6381044aea91fe05fb135a3c65 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-20T19:58:44Z |
| publishDate | 2015-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-615dbb6381044aea91fe05fb135a3c652022-12-21T19:28:06ZengMDPI AGMicromachines2072-666X2015-02-016225226510.3390/mi6020252mi6020252Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale LithographyHarutaka Mekaru0Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, JapanIn combination with tapered-trench-etching of Si and SU-8 photoresist, a grayscale mask for deep X-ray lithography was fabricated and passed a 10-times-exposure test. The performance of the X-ray grayscale mask was evaluated using the TERAS synchrotron radiation facility at the National Institute of Advanced Industrial Science and Technology (AIST). Although the SU-8 before photo-curing has been evaluated as a negative-tone photoresist for ultraviolet (UV) and X-ray lithographies, the characteristic of the SU-8 after photo-curing has not been investigated. A polymethyl methacrylate (PMMA) sheet was irradiated by a synchrotron radiation through an X-ray mask, and relationships between the dose energy and exposure depth, and between the dose energy and dimensional transition, were investigated. Using such a technique, the shape of a 26-μm-high Si absorber was transformed into the shape of a PMMA microneedle with a height of 76 μm, and done with a high contrast. Although during the fabrication process of the X-ray mask a 100-μm-pattern-pitch (by design) was enlarged to 120 μm. However, with an increase in an integrated dose energy this number decreased to 99 μm. These results show that the X-ray grayscale mask has many practical applications. In this paper, the author reports on the evaluation results of SU-8 when used as a membrane material for an X-ray mask.http://www.mdpi.com/2072-666X/6/2/252SU-8X-ray lithographyX-ray maskgrayscaletapered trench etchingPMMAsynchrotron radiation |
| spellingShingle | Harutaka Mekaru Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography Micromachines SU-8 X-ray lithography X-ray mask grayscale tapered trench etching PMMA synchrotron radiation |
| title | Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography |
| title_full | Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography |
| title_fullStr | Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography |
| title_full_unstemmed | Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography |
| title_short | Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography |
| title_sort | performance of su 8 membrane suitable for deep x ray grayscale lithography |
| topic | SU-8 X-ray lithography X-ray mask grayscale tapered trench etching PMMA synchrotron radiation |
| url | http://www.mdpi.com/2072-666X/6/2/252 |
| work_keys_str_mv | AT harutakamekaru performanceofsu8membranesuitablefordeepxraygrayscalelithography |