Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure
In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which i...
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MDPI AG
2017-05-01
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| Series: | Crystals |
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| Online Access: | http://www.mdpi.com/2073-4352/7/6/155 |
| _version_ | 1811185082930561024 |
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| author | Liang Zhao Zuoxing Guo Xiangdong Ding Jingjuan Li Shen Yang Min Zhang Lei Zhao |
| author_facet | Liang Zhao Zuoxing Guo Xiangdong Ding Jingjuan Li Shen Yang Min Zhang Lei Zhao |
| author_sort | Liang Zhao |
| collection | DOAJ |
| description | In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which is the same as the substrate, into the In0.82Ga0.18As/InP heterostructure. The epitaxial layers and buffer layers were grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. In this study, the surface morphology and microstructures of the heterostructure were investigated by SEM, AFM, XRD and TEM. The residual strains of the In0.82Ga0.18As epitaxial layer in different samples were studied by Raman spectroscopy. The residual strain of the In0.82Ga0.18As epitaxial layer was decreased by designing double buffer layers which included an InP layer; as a result, dislocations in the epitaxial layer were effectively suppressed since the dislocation density was notably reduced. Moreover, the performance of In0.82Ga0.18As films was investigated using the Hall test, and the results are in line with our expectations. By comparing different buffer layer structures, we explained the mechanism of dislocation density reduction by using double buffer layers, which included a thin InP layer. |
| first_indexed | 2024-04-11T13:23:29Z |
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| id | doaj.art-617d4d8736d34a21977178b7a494a861 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-11T13:23:29Z |
| publishDate | 2017-05-01 |
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| spelling | doaj.art-617d4d8736d34a21977178b7a494a8612022-12-22T04:22:08ZengMDPI AGCrystals2073-43522017-05-017615510.3390/cryst7060155cryst7060155Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP HeterostructureLiang Zhao0Zuoxing Guo1Xiangdong Ding2Jingjuan Li3Shen Yang4Min Zhang5Lei Zhao6Key Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, ChinaKey Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, ChinaState Key Lab for Mechanical Behavior of Materials, College of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaKey Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, ChinaKey Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, ChinaKey Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, ChinaKey Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, ChinaIn order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which is the same as the substrate, into the In0.82Ga0.18As/InP heterostructure. The epitaxial layers and buffer layers were grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. In this study, the surface morphology and microstructures of the heterostructure were investigated by SEM, AFM, XRD and TEM. The residual strains of the In0.82Ga0.18As epitaxial layer in different samples were studied by Raman spectroscopy. The residual strain of the In0.82Ga0.18As epitaxial layer was decreased by designing double buffer layers which included an InP layer; as a result, dislocations in the epitaxial layer were effectively suppressed since the dislocation density was notably reduced. Moreover, the performance of In0.82Ga0.18As films was investigated using the Hall test, and the results are in line with our expectations. By comparing different buffer layer structures, we explained the mechanism of dislocation density reduction by using double buffer layers, which included a thin InP layer.http://www.mdpi.com/2073-4352/7/6/155In0.82Ga0.18Assemiconductor III–V materialsepitaxy growthMOCVDInP buffer layerdislocation density |
| spellingShingle | Liang Zhao Zuoxing Guo Xiangdong Ding Jingjuan Li Shen Yang Min Zhang Lei Zhao Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure Crystals In0.82Ga0.18As semiconductor III–V materials epitaxy growth MOCVD InP buffer layer dislocation density |
| title | Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure |
| title_full | Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure |
| title_fullStr | Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure |
| title_full_unstemmed | Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure |
| title_short | Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure |
| title_sort | effects of in0 82ga0 18as inp double buffers design on the microstructure of the in0 82g0 18as inp heterostructure |
| topic | In0.82Ga0.18As semiconductor III–V materials epitaxy growth MOCVD InP buffer layer dislocation density |
| url | http://www.mdpi.com/2073-4352/7/6/155 |
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