Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which i...

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Bibliographic Details
Main Authors:	Liang Zhao, Zuoxing Guo, Xiangdong Ding, Jingjuan Li, Shen Yang, Min Zhang, Lei Zhao
Format:	Article
Language:	English
Published:	MDPI AG 2017-05-01
Series:	Crystals
Subjects:	In0.82Ga0.18As semiconductor III–V materials epitaxy growth MOCVD InP buffer layer dislocation density
Online Access:	http://www.mdpi.com/2073-4352/7/6/155

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