Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering
High-performance P-type cuprous oxide (Cu2O) film was prepared at room temperature by high power impulse magnetron sputtering. Optical emission spectra revealed that the ratio of Cu radicals/ions in the plasma significantly decreased with increasing process pressure due to the reduction of sputterin...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2024-06-01
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| Series: | Journal of Science: Advanced Materials and Devices |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2468217924000030 |
| _version_ | 1797336891530412032 |
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| author | Ming-Jie Zhao Jie Huang Hai-Cheng Li Qi-Zhen Chen Qi-Hui Huang Wan-Yu Wu Dong-Sing Wuu Feng-Min Lai Shui-Yang Lien Wen-Zhang Zhu |
| author_facet | Ming-Jie Zhao Jie Huang Hai-Cheng Li Qi-Zhen Chen Qi-Hui Huang Wan-Yu Wu Dong-Sing Wuu Feng-Min Lai Shui-Yang Lien Wen-Zhang Zhu |
| author_sort | Ming-Jie Zhao |
| collection | DOAJ |
| description | High-performance P-type cuprous oxide (Cu2O) film was prepared at room temperature by high power impulse magnetron sputtering. Optical emission spectra revealed that the ratio of Cu radicals/ions in the plasma significantly decreased with increasing process pressure due to the reduction of sputtering yield as the Cu target surface was oxidized by the increased oxygen radicals/ions. In addition, the increase of self-sputtering yield for Cu cations with increasing process pressure reduced the arrival ratio of Cu species at the substrate surface. As a result, the film crystal phase transformed from Cu2O to Cu4O3 and CuO with increasing process pressure. X-ray photoelectron spectra and Hall effect test results revealed that the oxygen vacancy defects in the films were passivated by the increased oxygen species at higher process pressure, leading to the inhibition of electron background and the emergence of net hole concentration. A mobility of 37.3 cm2/V·s was achieved, which is very high for room-temperature-deposited Cu2O film and comparable to high-temperature (300–600 °C) deposited/post-annealed Cu2O film. Finally, Cu2O thin film transistors (TFTs) exhibited reasonable switching characteristics with a low off-current of 0.3 nA without post-annealing treatment, showing an advantage in low-temperature preparation. |
| first_indexed | 2024-03-08T09:01:29Z |
| format | Article |
| id | doaj.art-618f164bafba41b785f7e7f3bc141019 |
| institution | Directory Open Access Journal |
| issn | 2468-2179 |
| language | English |
| last_indexed | 2024-03-08T09:01:29Z |
| publishDate | 2024-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Science: Advanced Materials and Devices |
| spelling | doaj.art-618f164bafba41b785f7e7f3bc1410192024-02-01T06:34:59ZengElsevierJournal of Science: Advanced Materials and Devices2468-21792024-06-0192100672Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputteringMing-Jie Zhao0Jie Huang1Hai-Cheng Li2Qi-Zhen Chen3Qi-Hui Huang4Wan-Yu Wu5Dong-Sing Wuu6Feng-Min Lai7Shui-Yang Lien8Wen-Zhang Zhu9Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, ChinaXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, ChinaXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, ChinaXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, ChinaXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, ChinaDepartment of Materials Science and Engineering, National United University, Miaoli, 360302, TaiwanDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, 54561, TaiwanDepartment of Biomedical Engineering, Da-Yeh University, Changhua, 51591, TaiwanXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, China; Department of Biomedical Engineering, Da-Yeh University, Changhua, 51591, Taiwan; Corresponding author. Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, China.Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian, 361024, ChinaHigh-performance P-type cuprous oxide (Cu2O) film was prepared at room temperature by high power impulse magnetron sputtering. Optical emission spectra revealed that the ratio of Cu radicals/ions in the plasma significantly decreased with increasing process pressure due to the reduction of sputtering yield as the Cu target surface was oxidized by the increased oxygen radicals/ions. In addition, the increase of self-sputtering yield for Cu cations with increasing process pressure reduced the arrival ratio of Cu species at the substrate surface. As a result, the film crystal phase transformed from Cu2O to Cu4O3 and CuO with increasing process pressure. X-ray photoelectron spectra and Hall effect test results revealed that the oxygen vacancy defects in the films were passivated by the increased oxygen species at higher process pressure, leading to the inhibition of electron background and the emergence of net hole concentration. A mobility of 37.3 cm2/V·s was achieved, which is very high for room-temperature-deposited Cu2O film and comparable to high-temperature (300–600 °C) deposited/post-annealed Cu2O film. Finally, Cu2O thin film transistors (TFTs) exhibited reasonable switching characteristics with a low off-current of 0.3 nA without post-annealing treatment, showing an advantage in low-temperature preparation.http://www.sciencedirect.com/science/article/pii/S2468217924000030P-type oxide semiconductorCopper oxideCrystal phaseHigh power impulse magnetron sputtering (HiPIMS)High-mobilityRoom-temperature-deposition |
| spellingShingle | Ming-Jie Zhao Jie Huang Hai-Cheng Li Qi-Zhen Chen Qi-Hui Huang Wan-Yu Wu Dong-Sing Wuu Feng-Min Lai Shui-Yang Lien Wen-Zhang Zhu Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering Journal of Science: Advanced Materials and Devices P-type oxide semiconductor Copper oxide Crystal phase High power impulse magnetron sputtering (HiPIMS) High-mobility Room-temperature-deposition |
| title | Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering |
| title_full | Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering |
| title_fullStr | Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering |
| title_full_unstemmed | Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering |
| title_short | Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering |
| title_sort | crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering |
| topic | P-type oxide semiconductor Copper oxide Crystal phase High power impulse magnetron sputtering (HiPIMS) High-mobility Room-temperature-deposition |
| url | http://www.sciencedirect.com/science/article/pii/S2468217924000030 |
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