Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation
Low temperature (<200 oC) crystallization of GeSn (substitutional Sn concentration: >8%) on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn films on insulating substrates by combination of laser irradiati...
| Main Authors: | , , , , , |
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| Format: | Article |
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AIP Publishing LLC
2017-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4993220 |
| _version_ | 1811303565644267520 |
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| author | Kenta Moto Takayuki Sugino Ryo Matsumura Hiroshi Ikenoue Masanobu Miyao Taizoh Sadoh |
| author_facet | Kenta Moto Takayuki Sugino Ryo Matsumura Hiroshi Ikenoue Masanobu Miyao Taizoh Sadoh |
| author_sort | Kenta Moto |
| collection | DOAJ |
| description | Low temperature (<200 oC) crystallization of GeSn (substitutional Sn concentration: >8%) on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn films on insulating substrates by combination of laser irradiation and subsequent thermal annealing is developed. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with weak laser fluence, complete crystallization of GeSn films is achieved by subsequent thermal annealing at ∼170 oC without incubation time. In addition, the quality of GeSn films obtained by this method is higher compared with conventional growth techniques such as melting growth by pulsed laser annealing or solid-phase crystallization (SPC) without pre-laser irradiation. Substitutional Sn concentrations in the grown layers estimated by Raman spectroscopy measurements are 8-10%, which far exceed thermal equilibrium solid-solubility of Sn in Ge (∼2%). These phenomena are explained by generation of a limited number of nuclei by weak laser irradiation and lateral SPC by subsequent thermal annealing. This method will facilitate realization of next-generation high performance devices on flexible insulating substrates. |
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| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-13T07:50:22Z |
| publishDate | 2017-07-01 |
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| spelling | doaj.art-61a15472060343ff8fae736cfba5bed92022-12-22T02:55:34ZengAIP Publishing LLCAIP Advances2158-32262017-07-0177075204075204-610.1063/1.4993220015707ADVLow-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiationKenta Moto0Takayuki Sugino1Ryo Matsumura2Hiroshi Ikenoue3Masanobu Miyao4Taizoh Sadoh5Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, JapanDepartment of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, JapanDepartment of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, JapanDepartment of Gigaphoton Next GLP, Kyushu University, 744 Motooka, Fukuoka 819-0395, JapanDepartment of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, JapanDepartment of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, JapanLow temperature (<200 oC) crystallization of GeSn (substitutional Sn concentration: >8%) on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn films on insulating substrates by combination of laser irradiation and subsequent thermal annealing is developed. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with weak laser fluence, complete crystallization of GeSn films is achieved by subsequent thermal annealing at ∼170 oC without incubation time. In addition, the quality of GeSn films obtained by this method is higher compared with conventional growth techniques such as melting growth by pulsed laser annealing or solid-phase crystallization (SPC) without pre-laser irradiation. Substitutional Sn concentrations in the grown layers estimated by Raman spectroscopy measurements are 8-10%, which far exceed thermal equilibrium solid-solubility of Sn in Ge (∼2%). These phenomena are explained by generation of a limited number of nuclei by weak laser irradiation and lateral SPC by subsequent thermal annealing. This method will facilitate realization of next-generation high performance devices on flexible insulating substrates.http://dx.doi.org/10.1063/1.4993220 |
| spellingShingle | Kenta Moto Takayuki Sugino Ryo Matsumura Hiroshi Ikenoue Masanobu Miyao Taizoh Sadoh Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation AIP Advances |
| title | Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation |
| title_full | Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation |
| title_fullStr | Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation |
| title_full_unstemmed | Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation |
| title_short | Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation |
| title_sort | low temperature 200 oc solid phase crystallization of high substitutional sn concentration ∼10 gesn on insulator enhanced by weak laser irradiation |
| url | http://dx.doi.org/10.1063/1.4993220 |
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