Recent Progress in III–V Photodetectors Grown on Silicon
An efficient photodetector (PD) is a key component in silicon-based photonic integrated circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation wavelength range have become increasingly important for Si photonics in various applications. Monolithic integration o...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-05-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/10/5/573 |
| _version_ | 1827740327333593088 |
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| author | Cong Zeng Donghui Fu Yunjiang Jin Yu Han |
| author_facet | Cong Zeng Donghui Fu Yunjiang Jin Yu Han |
| author_sort | Cong Zeng |
| collection | DOAJ |
| description | An efficient photodetector (PD) is a key component in silicon-based photonic integrated circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation wavelength range have become increasingly important for Si photonics in various applications. Monolithic integration of III–V PDs on Si by direct heteroepitaxy exhibits the lowest cost, the largest integration density, and the highest throughput. As the research of integrating III–V lasers on Si flourishes in the last decade, various types of III–V PDs on Si with different device structures and absorption materials have also been developed. While the integration of III–V lasers on Si using various technologies has been systematically reviewed, there are few reviews of integrating III–V PDs on Si. In this article, we review the most recent advances in III–V PDs directly grown on Si using two different epitaxial techniques: blanket heteroepitaxy and selective heteroepitaxy. |
| first_indexed | 2024-03-11T03:23:22Z |
| format | Article |
| id | doaj.art-61b43f44d18045f89d9fe6236d05feaf |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-11T03:23:22Z |
| publishDate | 2023-05-01 |
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| series | Photonics |
| spelling | doaj.art-61b43f44d18045f89d9fe6236d05feaf2023-11-18T02:54:40ZengMDPI AGPhotonics2304-67322023-05-0110557310.3390/photonics10050573Recent Progress in III–V Photodetectors Grown on SiliconCong Zeng0Donghui Fu1Yunjiang Jin2Yu Han3State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, ChinaAn efficient photodetector (PD) is a key component in silicon-based photonic integrated circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation wavelength range have become increasingly important for Si photonics in various applications. Monolithic integration of III–V PDs on Si by direct heteroepitaxy exhibits the lowest cost, the largest integration density, and the highest throughput. As the research of integrating III–V lasers on Si flourishes in the last decade, various types of III–V PDs on Si with different device structures and absorption materials have also been developed. While the integration of III–V lasers on Si using various technologies has been systematically reviewed, there are few reviews of integrating III–V PDs on Si. In this article, we review the most recent advances in III–V PDs directly grown on Si using two different epitaxial techniques: blanket heteroepitaxy and selective heteroepitaxy.https://www.mdpi.com/2304-6732/10/5/573Si photonicsIII–V photodetectorblanket heteroepitaxyselective heteroepitaxy |
| spellingShingle | Cong Zeng Donghui Fu Yunjiang Jin Yu Han Recent Progress in III–V Photodetectors Grown on Silicon Photonics Si photonics III–V photodetector blanket heteroepitaxy selective heteroepitaxy |
| title | Recent Progress in III–V Photodetectors Grown on Silicon |
| title_full | Recent Progress in III–V Photodetectors Grown on Silicon |
| title_fullStr | Recent Progress in III–V Photodetectors Grown on Silicon |
| title_full_unstemmed | Recent Progress in III–V Photodetectors Grown on Silicon |
| title_short | Recent Progress in III–V Photodetectors Grown on Silicon |
| title_sort | recent progress in iii v photodetectors grown on silicon |
| topic | Si photonics III–V photodetector blanket heteroepitaxy selective heteroepitaxy |
| url | https://www.mdpi.com/2304-6732/10/5/573 |
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