A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs

A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs

This study proposed a novel source/drain (S/D) extension scheme to increase the stress in nanosheet (NS) field-effect transistors (NSFETs) and investigated the scheme by using technology-computer-aided-design simulations. In three-dimensional integrated circuits, transistors in the bottom tier were...

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Bibliographic Details
Main Authors: Sanguk Lee, Jinsu Jeong, Bohyeon Kang, Seunghwan Lee, Junjong Lee, Jaewan Lim, Hyeonjun Hwang, Sungmin Ahn, Rockhyun Baek
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Nanomaterials
Subjects:
nanosheet FET
laser-spike annealing
rapid thermal annealing
lateral diffusion
strain engineering
3D ICs
Online Access:https://www.mdpi.com/2079-4991/13/5/868

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