Conversion of Charge Carrier Polarity in MoTe<sub>2</sub> Field Effect Transistor via Laser Doping

Conversion of Charge Carrier Polarity in MoTe<sub>2</sub> Field Effect Transistor via Laser Doping

A two-dimensional (2D) atomic crystalline transition metal dichalcogenides has shown immense features, aiming for future nanoelectronic devices comparable to conventional silicon (Si). 2D molybdenum ditelluride (MoTe<sub>2</sub>) has a small bandgap, appears close to that of Si, and is m...

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Bibliographic Details
Main Authors: Hanul Kim, Inayat Uddin, Kenji Watanabe, Takashi Taniguchi, Dongmok Whang, Gil-Ho Kim
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Nanomaterials
Subjects:
2D material
laser doping
CMOS inverter
FET
MoTe<sub>2</sub>
Online Access:https://www.mdpi.com/2079-4991/13/10/1700

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