Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy
The realization of textured films of 2-dimensionally (2D) bonded materials on amorphous substrates is important for the integration of this material class with silicon based technology. Here, we demonstrate the successful growth by molecular beam epitaxy of textured Sb2Te3 films and GeTe/Sb2Te3 supe...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2017-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4974464 |
| _version_ | 1818497751342645248 |
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| author | Jos E. Boschker E. Tisbi E. Placidi Jamo Momand Andrea Redaelli Bart J. Kooi Fabrizio Arciprete Raffaella Calarco |
| author_facet | Jos E. Boschker E. Tisbi E. Placidi Jamo Momand Andrea Redaelli Bart J. Kooi Fabrizio Arciprete Raffaella Calarco |
| author_sort | Jos E. Boschker |
| collection | DOAJ |
| description | The realization of textured films of 2-dimensionally (2D) bonded materials on amorphous substrates is important for the integration of this material class with silicon based technology. Here, we demonstrate the successful growth by molecular beam epitaxy of textured Sb2Te3 films and GeTe/Sb2Te3 superlattices on two types of amorphous substrates: carbon and SiO2. X-ray diffraction measurements reveal that the out-of-plane alignment of grains in the layers has a mosaic spread with a full width half maximum of 2.8°. We show that a good texture on SiO2 is only obtained for an appropriate surface preparation, which can be performed by ex situ exposure to Ar+ ions or by in situ exposure to an electron beam. X-ray photoelectron spectroscopy reveals that this surface preparation procedure results in reduced oxygen content. Finally, it is observed that film delamination can occur when a capping layer is deposited on top of a superlattice with a good texture. This is attributed to the stress in the capping layer and can be prevented by using optimized deposition conditions of the capping layer. The obtained results are also relevant to the growth of other 2D materials on amorphous substrates. |
| first_indexed | 2024-12-10T18:49:14Z |
| format | Article |
| id | doaj.art-6202912fe0c4467f93dd48c9b0561b9d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T18:49:14Z |
| publishDate | 2017-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-6202912fe0c4467f93dd48c9b0561b9d2022-12-22T01:37:23ZengAIP Publishing LLCAIP Advances2158-32262017-01-0171015106015106-810.1063/1.4974464041701ADVTextured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxyJos E. Boschker0E. Tisbi1E. Placidi2Jamo Momand3Andrea Redaelli4Bart J. Kooi5Fabrizio Arciprete6Raffaella Calarco7Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, GermanyDipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, I-00133 Rome, ItalyDipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, I-00133 Rome, ItalyZernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsMicron Semiconductor Italia s.r.l., Via Torri Bianche, 24, 20871 Vimercate, (MB), ItalyZernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The NetherlandsDipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, I-00133 Rome, ItalyPaul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, GermanyThe realization of textured films of 2-dimensionally (2D) bonded materials on amorphous substrates is important for the integration of this material class with silicon based technology. Here, we demonstrate the successful growth by molecular beam epitaxy of textured Sb2Te3 films and GeTe/Sb2Te3 superlattices on two types of amorphous substrates: carbon and SiO2. X-ray diffraction measurements reveal that the out-of-plane alignment of grains in the layers has a mosaic spread with a full width half maximum of 2.8°. We show that a good texture on SiO2 is only obtained for an appropriate surface preparation, which can be performed by ex situ exposure to Ar+ ions or by in situ exposure to an electron beam. X-ray photoelectron spectroscopy reveals that this surface preparation procedure results in reduced oxygen content. Finally, it is observed that film delamination can occur when a capping layer is deposited on top of a superlattice with a good texture. This is attributed to the stress in the capping layer and can be prevented by using optimized deposition conditions of the capping layer. The obtained results are also relevant to the growth of other 2D materials on amorphous substrates.http://dx.doi.org/10.1063/1.4974464 |
| spellingShingle | Jos E. Boschker E. Tisbi E. Placidi Jamo Momand Andrea Redaelli Bart J. Kooi Fabrizio Arciprete Raffaella Calarco Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy AIP Advances |
| title | Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy |
| title_full | Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy |
| title_fullStr | Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy |
| title_full_unstemmed | Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy |
| title_short | Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy |
| title_sort | textured sb2te3 films and gete sb2te3 superlattices grown on amorphous substrates by molecular beam epitaxy |
| url | http://dx.doi.org/10.1063/1.4974464 |
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