Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen

The progress in generating high static pressures in diamond anvil cells opens opportunities for studying novel materials with unusual properties. Here, the authors report a universal high-pressure diamond edge Raman scale up to 500 gigapascals, which does not require an additional pressure sensor.

Bibliographic Details
Main Authors: M. I. Eremets, V. S. Minkov, P. P. Kong, A. P. Drozdov, S. Chariton, V. B. Prakapenka
Format: Article
Language:English
Published: Nature Portfolio 2023-02-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-023-36429-9
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author M. I. Eremets
V. S. Minkov
P. P. Kong
A. P. Drozdov
S. Chariton
V. B. Prakapenka
author_facet M. I. Eremets
V. S. Minkov
P. P. Kong
A. P. Drozdov
S. Chariton
V. B. Prakapenka
author_sort M. I. Eremets
collection DOAJ
description The progress in generating high static pressures in diamond anvil cells opens opportunities for studying novel materials with unusual properties. Here, the authors report a universal high-pressure diamond edge Raman scale up to 500 gigapascals, which does not require an additional pressure sensor.
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spelling doaj.art-621c3b8cba37470cb565aaea47f3138c2023-03-22T11:45:50ZengNature PortfolioNature Communications2041-17232023-02-011411810.1038/s41467-023-36429-9Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogenM. I. Eremets0V. S. Minkov1P. P. Kong2A. P. Drozdov3S. Chariton4V. B. Prakapenka5Max Planck Institute for ChemistryMax Planck Institute for ChemistryMax Planck Institute for ChemistryMax Planck Institute for ChemistryCenter for Advanced Radiation Sources, University of ChicagoCenter for Advanced Radiation Sources, University of ChicagoThe progress in generating high static pressures in diamond anvil cells opens opportunities for studying novel materials with unusual properties. Here, the authors report a universal high-pressure diamond edge Raman scale up to 500 gigapascals, which does not require an additional pressure sensor.https://doi.org/10.1038/s41467-023-36429-9
spellingShingle M. I. Eremets
V. S. Minkov
P. P. Kong
A. P. Drozdov
S. Chariton
V. B. Prakapenka
Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen
Nature Communications
title Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen
title_full Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen
title_fullStr Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen
title_full_unstemmed Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen
title_short Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen
title_sort universal diamond edge raman scale to 0 5 terapascal and implications for the metallization of hydrogen
url https://doi.org/10.1038/s41467-023-36429-9
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