Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen
The progress in generating high static pressures in diamond anvil cells opens opportunities for studying novel materials with unusual properties. Here, the authors report a universal high-pressure diamond edge Raman scale up to 500 gigapascals, which does not require an additional pressure sensor.
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
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Nature Portfolio
2023-02-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-023-36429-9 |
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author | M. I. Eremets V. S. Minkov P. P. Kong A. P. Drozdov S. Chariton V. B. Prakapenka |
author_facet | M. I. Eremets V. S. Minkov P. P. Kong A. P. Drozdov S. Chariton V. B. Prakapenka |
author_sort | M. I. Eremets |
collection | DOAJ |
description | The progress in generating high static pressures in diamond anvil cells opens opportunities for studying novel materials with unusual properties. Here, the authors report a universal high-pressure diamond edge Raman scale up to 500 gigapascals, which does not require an additional pressure sensor. |
first_indexed | 2024-04-09T22:48:07Z |
format | Article |
id | doaj.art-621c3b8cba37470cb565aaea47f3138c |
institution | Directory Open Access Journal |
issn | 2041-1723 |
language | English |
last_indexed | 2024-04-09T22:48:07Z |
publishDate | 2023-02-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Nature Communications |
spelling | doaj.art-621c3b8cba37470cb565aaea47f3138c2023-03-22T11:45:50ZengNature PortfolioNature Communications2041-17232023-02-011411810.1038/s41467-023-36429-9Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogenM. I. Eremets0V. S. Minkov1P. P. Kong2A. P. Drozdov3S. Chariton4V. B. Prakapenka5Max Planck Institute for ChemistryMax Planck Institute for ChemistryMax Planck Institute for ChemistryMax Planck Institute for ChemistryCenter for Advanced Radiation Sources, University of ChicagoCenter for Advanced Radiation Sources, University of ChicagoThe progress in generating high static pressures in diamond anvil cells opens opportunities for studying novel materials with unusual properties. Here, the authors report a universal high-pressure diamond edge Raman scale up to 500 gigapascals, which does not require an additional pressure sensor.https://doi.org/10.1038/s41467-023-36429-9 |
spellingShingle | M. I. Eremets V. S. Minkov P. P. Kong A. P. Drozdov S. Chariton V. B. Prakapenka Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen Nature Communications |
title | Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen |
title_full | Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen |
title_fullStr | Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen |
title_full_unstemmed | Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen |
title_short | Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen |
title_sort | universal diamond edge raman scale to 0 5 terapascal and implications for the metallization of hydrogen |
url | https://doi.org/10.1038/s41467-023-36429-9 |
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