Ultrathin high-efficiency solar cells based on AIIIBV/Ge heterostructures for space applications
The analysis of the prospects for the creation of ultrathin, lightweight and highly efficient solar cells based on AIIIBV/Ge heterostructures. Technological problems and prospects of various options are discussed. As the most promising method, it is proposed to use chemical thinning of AIIIBV/Ge het...
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| Format: | Article |
| Language: | English |
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Peoples’ Friendship University of Russia (RUDN University)
2024-03-01
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| Series: | RUDN Journal of Engineering Research |
| Subjects: | |
| Online Access: | https://journals.rudn.ru/engineering-researches/article/viewFile/38547/23312 |
| _version_ | 1827294440536932352 |
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| author | Alexandr I. Nikiforov Nikolai A. Pakhanov Oleg P. Pchelyakov Alexandr V. Latyshev |
| author_facet | Alexandr I. Nikiforov Nikolai A. Pakhanov Oleg P. Pchelyakov Alexandr V. Latyshev |
| author_sort | Alexandr I. Nikiforov |
| collection | DOAJ |
| description | The analysis of the prospects for the creation of ultrathin, lightweight and highly efficient solar cells based on AIIIBV/Ge heterostructures. Technological problems and prospects of various options are discussed. As the most promising method, it is proposed to use chemical thinning of AIIIBV/Ge heterostructures using a temporary technological carrier. A solar cell grown on a germanium substrate with a contact grid, an antireflection coating and radiation-proof glass, but without a back metal contact, is glued face-on to a technological carrier. Next, the Ge substrate is etched to the desired thickness and a back contact is created, and the carrier is removed by heating. This technique makes it possible to thin the Ge substrate to several tens of microns and significantly increase the percentage of yield of suitable devices almost without the risk of destroying the heterostructure. Measurement of the current-voltage characteristics of a thinned solar cell showed that for the terrestrial spectrum, the values of the parameters of the thinned sample coincide with the initial values. The idling voltage is 2.67 V, the current density is 14 mA/cm2.This opens up the possibility of creating highly efficient thin and light solar cells for space batteries based on currently mass-produced heterostructures - AIIIBV/Ge. |
| first_indexed | 2024-04-24T14:02:11Z |
| format | Article |
| id | doaj.art-6230849481084e59ad84c51f8ac32f62 |
| institution | Directory Open Access Journal |
| issn | 2312-8143 2312-8151 |
| language | English |
| last_indexed | 2024-04-24T14:02:11Z |
| publishDate | 2024-03-01 |
| publisher | Peoples’ Friendship University of Russia (RUDN University) |
| record_format | Article |
| series | RUDN Journal of Engineering Research |
| spelling | doaj.art-6230849481084e59ad84c51f8ac32f622024-04-03T12:34:27ZengPeoples’ Friendship University of Russia (RUDN University)RUDN Journal of Engineering Research2312-81432312-81512024-03-01251525610.22363/2312-8143-2024-25-1-52-5621113Ultrathin high-efficiency solar cells based on AIIIBV/Ge heterostructures for space applicationsAlexandr I. Nikiforov0https://orcid.org/0000-0003-0583-0508Nikolai A. Pakhanov1https://orcid.org/0000-0002-3999-5231Oleg P. Pchelyakov2https://orcid.org/0000-0003-0520-5905Alexandr V. Latyshev3https://orcid.org/0000-0002-4016-593XRzhanov Institute of Semiconductor Physics SB RASRzhanov Institute of Semiconductor Physics SB RASRzhanov Institute of Semiconductor Physics SB RASRzhanov Institute of Semiconductor Physics SB RASThe analysis of the prospects for the creation of ultrathin, lightweight and highly efficient solar cells based on AIIIBV/Ge heterostructures. Technological problems and prospects of various options are discussed. As the most promising method, it is proposed to use chemical thinning of AIIIBV/Ge heterostructures using a temporary technological carrier. A solar cell grown on a germanium substrate with a contact grid, an antireflection coating and radiation-proof glass, but without a back metal contact, is glued face-on to a technological carrier. Next, the Ge substrate is etched to the desired thickness and a back contact is created, and the carrier is removed by heating. This technique makes it possible to thin the Ge substrate to several tens of microns and significantly increase the percentage of yield of suitable devices almost without the risk of destroying the heterostructure. Measurement of the current-voltage characteristics of a thinned solar cell showed that for the terrestrial spectrum, the values of the parameters of the thinned sample coincide with the initial values. The idling voltage is 2.67 V, the current density is 14 mA/cm2.This opens up the possibility of creating highly efficient thin and light solar cells for space batteries based on currently mass-produced heterostructures - AIIIBV/Ge.https://journals.rudn.ru/engineering-researches/article/viewFile/38547/23312solar convertersheterostructuresa3b5gethinning |
| spellingShingle | Alexandr I. Nikiforov Nikolai A. Pakhanov Oleg P. Pchelyakov Alexandr V. Latyshev Ultrathin high-efficiency solar cells based on AIIIBV/Ge heterostructures for space applications RUDN Journal of Engineering Research solar converters heterostructures a3b5 ge thinning |
| title | Ultrathin high-efficiency solar cells based on AIIIBV/Ge heterostructures for space applications |
| title_full | Ultrathin high-efficiency solar cells based on AIIIBV/Ge heterostructures for space applications |
| title_fullStr | Ultrathin high-efficiency solar cells based on AIIIBV/Ge heterostructures for space applications |
| title_full_unstemmed | Ultrathin high-efficiency solar cells based on AIIIBV/Ge heterostructures for space applications |
| title_short | Ultrathin high-efficiency solar cells based on AIIIBV/Ge heterostructures for space applications |
| title_sort | ultrathin high efficiency solar cells based on aiiibv ge heterostructures for space applications |
| topic | solar converters heterostructures a3b5 ge thinning |
| url | https://journals.rudn.ru/engineering-researches/article/viewFile/38547/23312 |
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