An inverted architecture P3HT:CdSe bulk-heterojunction hybrid solar cell utilizing a quantum junction with high open circuit voltage and efficiency
Exploring CdSe QDs as a substitute for [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) in Poly (3-hexylthiophene) (P3HT) based photovoltaic devices received much attention due to its properties such as tunable band gap over the visible range, better band alignment with P3HT and inexpensiveness. Bu...
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| Format: | Article |
| Language: | English |
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Elsevier
2022-11-01
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| Series: | Energy Reports |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S235248472201914X |
| _version_ | 1797901868232343552 |
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| author | Ajith Thomas Anju Elsa Tom V.V. Ison |
| author_facet | Ajith Thomas Anju Elsa Tom V.V. Ison |
| author_sort | Ajith Thomas |
| collection | DOAJ |
| description | Exploring CdSe QDs as a substitute for [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) in Poly (3-hexylthiophene) (P3HT) based photovoltaic devices received much attention due to its properties such as tunable band gap over the visible range, better band alignment with P3HT and inexpensiveness. But, the VOCvalues of the P3HT:CdSe QDs bulk-heterojunction (BHJ) hybrid solar cells are still inferior, which happens to be the main performance-limiting factor for these devices. We have resolved this issue in this study by the application of an interfacial buffer layer (BL) in an inverted architecture utilizing zinc oxide (ZnO) as an electron transporting layer. The BL was also formed of CdSe QDs. It was found that the application of the interfacial BL reduces the interface recombination which resulted in a VOCvalue of 0.96 V. To the best of our knowledge, this is the best VOCvalue reported for the P3HT:CdSe QDs BHJ system so far. A quantum junction (QJ) was also formed between the QDs in the BL and the QDs in the BHJ by passivating them with Iodine and 3-Mercaptopropionic acid (MPA), respectively. The QJ induces an extended electric field in the BHJ which benefits charge extraction and ultimately resulting in an enhanced short circuit current (JSC). |
| first_indexed | 2024-04-10T09:08:45Z |
| format | Article |
| id | doaj.art-62b1d903d0c348cfaf865453e965a885 |
| institution | Directory Open Access Journal |
| issn | 2352-4847 |
| language | English |
| last_indexed | 2024-04-10T09:08:45Z |
| publishDate | 2022-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Energy Reports |
| spelling | doaj.art-62b1d903d0c348cfaf865453e965a8852023-02-21T05:13:54ZengElsevierEnergy Reports2352-48472022-11-0181297912986An inverted architecture P3HT:CdSe bulk-heterojunction hybrid solar cell utilizing a quantum junction with high open circuit voltage and efficiencyAjith Thomas0Anju Elsa Tom1V.V. Ison2Centre for Nano-Bio-Polymer Science and Technology, Research and PG Department of Physics, St. Thomas College, Palai, Kerala 686574, India; Research and Development Centre, Bharathiar University, Coimbatore, Tamil Nadu 641046, IndiaCentre for Nano-Bio-Polymer Science and Technology, Research and PG Department of Physics, St. Thomas College, Palai, Kerala 686574, India; Department of Physics, St. Aloysius College, Elthuruth, Thrissur, Kerala, 680611, IndiaCentre for Nano-Bio-Polymer Science and Technology, Research and PG Department of Physics, St. Thomas College, Palai, Kerala 686574, India; Research and PG Department of Physics, Kuriakose Elias College, Mannanam, Kerala 686561, India; Corresponding author at: Centre for Nano-Bio-Polymer Science and Technology, Research and PG Department of Physics, St. Thomas College, Palai, Kerala 686574, India.Exploring CdSe QDs as a substitute for [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) in Poly (3-hexylthiophene) (P3HT) based photovoltaic devices received much attention due to its properties such as tunable band gap over the visible range, better band alignment with P3HT and inexpensiveness. But, the VOCvalues of the P3HT:CdSe QDs bulk-heterojunction (BHJ) hybrid solar cells are still inferior, which happens to be the main performance-limiting factor for these devices. We have resolved this issue in this study by the application of an interfacial buffer layer (BL) in an inverted architecture utilizing zinc oxide (ZnO) as an electron transporting layer. The BL was also formed of CdSe QDs. It was found that the application of the interfacial BL reduces the interface recombination which resulted in a VOCvalue of 0.96 V. To the best of our knowledge, this is the best VOCvalue reported for the P3HT:CdSe QDs BHJ system so far. A quantum junction (QJ) was also formed between the QDs in the BL and the QDs in the BHJ by passivating them with Iodine and 3-Mercaptopropionic acid (MPA), respectively. The QJ induces an extended electric field in the BHJ which benefits charge extraction and ultimately resulting in an enhanced short circuit current (JSC).http://www.sciencedirect.com/science/article/pii/S235248472201914XBulk-heterojunctionHybrid solar cellP3HTCdSe quantum dot |
| spellingShingle | Ajith Thomas Anju Elsa Tom V.V. Ison An inverted architecture P3HT:CdSe bulk-heterojunction hybrid solar cell utilizing a quantum junction with high open circuit voltage and efficiency Energy Reports Bulk-heterojunction Hybrid solar cell P3HT CdSe quantum dot |
| title | An inverted architecture P3HT:CdSe bulk-heterojunction hybrid solar cell utilizing a quantum junction with high open circuit voltage and efficiency |
| title_full | An inverted architecture P3HT:CdSe bulk-heterojunction hybrid solar cell utilizing a quantum junction with high open circuit voltage and efficiency |
| title_fullStr | An inverted architecture P3HT:CdSe bulk-heterojunction hybrid solar cell utilizing a quantum junction with high open circuit voltage and efficiency |
| title_full_unstemmed | An inverted architecture P3HT:CdSe bulk-heterojunction hybrid solar cell utilizing a quantum junction with high open circuit voltage and efficiency |
| title_short | An inverted architecture P3HT:CdSe bulk-heterojunction hybrid solar cell utilizing a quantum junction with high open circuit voltage and efficiency |
| title_sort | inverted architecture p3ht cdse bulk heterojunction hybrid solar cell utilizing a quantum junction with high open circuit voltage and efficiency |
| topic | Bulk-heterojunction Hybrid solar cell P3HT CdSe quantum dot |
| url | http://www.sciencedirect.com/science/article/pii/S235248472201914X |
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